APT2X61DC60J Microsemi Power Products Group, APT2X61DC60J Datasheet - Page 3

• Manufacturer Part Number: APT2X61DC60J
• Description: DIODE SCHOTTKY 60A 600V SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X61DC60J

• Diode Type: Silicon Carbide Schottky
• Mounting Type: Chassis Mount
• Voltage - Forward (vf) (max) @ If: 1.8V @ 60A
• Current - Reverse Leakage @ Vr: 1.2mA @ 600V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 0ns
• Speed: No Recovery Time > 500mA (Io)
• Diode Configuration: 2 Independent
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Diode Performance Curve
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.5
0.4
0.3
0.2
0.1
2500
2000
1500
1000
0.00001
120
500
0
90
60
30
0
0
0
1
0.05
0.7
0.5
0.9
0.3
0.1
Capacitance vs.Reverse Voltage
0.5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Forward Characteristics
T
V
J
=75°C
F
V
1
Forward Voltage (V)
R
10
0.0001
Reverse Voltage
T
J
1.5
=25°C
2
T
100
J
=125°C
2.5
T
J
=175°C
0.001
Rectangular Pulse Duration (Seconds)
3
1000
3.5
www.microsemi.com
Single Pulse
0.01
1200
1000
800
600
400
200
0
APT2X61DC60J
APT2X60DC60J
200
0.1
300
Reverse Characteristics
V
R
Reverse Voltage (V)
400
T
J
=125°C
T
J
500
=175°C
1
600
T
J
T
=25°C
J
700
=75°C
800
10
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