DSPIC30F2010-20E/SO Microchip Technology, DSPIC30F2010-20E/SO Datasheet - Page 155

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DSPIC30F2010-20E/SO

Manufacturer Part Number
DSPIC30F2010-20E/SO
Description
IC,DSP,16-BIT,CMOS,SOP,28PIN,PLASTIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F2010-20E/SO

Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
20
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F2010-20E/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
TABLE 22-10: ELECTRICAL CHARACTERISTICS: BOR
TABLE 22-11: DC CHARACTERISTICS: PROGRAM AND EEPROM
© 2011 Microchip Technology Inc.
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
E
V
T
T
I
E
V
V
V
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
11 values not in usable operating range.
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
DEW
RETD
EB
PEW
RETD
D
DRW
P
PR
PEW
V
V
Symbol
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program Flash Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage
V
low
During Programming
During Programming
During Programming
for Read/Write
for Read
for Bulk Erase
for Erase/Write
DD
Characteristic
transition high to
Characteristic
(2)
on
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
V
V
10K
Min
0.8
4.5
3.0
0.8
40
40
MIN
MIN
Typ
100K
(3)
100
100
1M
10
10
10
2
2
(1)
4.58
Min
2.6
4.1
Max
5.5
2.6
5.5
5.5
5.5
2.6
30
30
30
-40°C ≤ T
Typ
-40°C ≤ T
5
-40°C ≤ T
-40°C ≤ T
Units
(1)
Year Provided no other specifications
Year Provided no other specifications
E/W
E/W
mA
mA
mA
ms
ms
V
V
V
V
dsPIC30F2010
A
A
Max
2.71
4.73
4.4
≤ +85°C for Industrial
≤ +125°C for Extended
-40° C ≤ T
Using EECON to read/write
V
voltage
RTSP
are violated
Row Erase
-40° C ≤ T
V
voltage
RTSP
are violated
Row Erase
Bulk Erase
A
A
MIN
MIN
≤ +85°C for Industrial
≤ +125°C for Extended
= Minimum operating
= Minimum operating
Units
mV
V
V
V
V
A
A
Conditions
≤ +85°C
≤ +85°C
Not in operating
range
DS70118J-page 155
Conditions

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