CY7C199CN-12VXAT Cypress Semiconductor Corp, CY7C199CN-12VXAT Datasheet - Page 12
![no-image](/images/manufacturer_photos/0/1/179/cypress_semiconductor_corp_sml.jpg)
CY7C199CN-12VXAT
Manufacturer Part Number
CY7C199CN-12VXAT
Description
CY7C199CN-12VXAT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199CN-15PXC.pdf
(18 pages)
Specifications of CY7C199CN-12VXAT
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Timing Waveforms
Write Cycle 3
Note
Document #: 001-06435 Rev. *E
18. The cycle is WE controlled, OE LOW. The minimum write cycle time is the sum of t
Address
In Out
Data
CE
WE
(WE controlled, OE low)
(continued)
Undefined
see footnotes
t
SA
[18]
t
HZWE
t
AW
t
SCE
t
WC
HZWE
t
PWE
and t
SD
t
SD
Data In Valid
.
t
HD
t
LZWE
t
HA
See Footnotes
CY7C199CN
Undefined
Page 12 of 18
[+] Feedback