CY7C1520V18-250BZC Cypress Semiconductor Corp, CY7C1520V18-250BZC Datasheet - Page 25

• Manufacturer Part Number: CY7C1520V18-250BZC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1520V18-250BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 72M (2M x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Notes
Document Number: 38-05563 Rev. *E
26. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
27. Outputs are disabled (High-Z) one clock cycle after a NOP.
28. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.
DQ
R/W
CQ
CQ#
LD
C#
C
K
K
A
NOP
t KHCH
1
t KH
t
t KL
t
SA
SC
A0
READ
2
t HC
t HA
t KHCH
t CYC
A1
t CQOH
READ
3
t CLZ
t KHKH
t CO
Figure 5. Read/Write/Deselect Sequence
Q00
NOP
4
t CCQO
t CQDOH
t DOH
Q01
t CQD
Q10
NOP
5
Q11
t CQOH
A2
t CHZ
WRITE
6
t KH
t SD
t HD
t CCQO
t KL
D20
CY7C1516V18, CY7C1527V18
CY7C1518V18, CY7C1520V18
A3
WRITE
7
[26, 27, 28]
D21
t CYC
t SD
D30
A4
READ
8
t HD
DON’T CARE
t KHKH
D31
9
UNDEFINED
Q40
Page 25 of 31
10
Q41
[+] Feedback