CY7C1520V18-250BZC Cypress Semiconductor Corp, CY7C1520V18-250BZC Datasheet - Page 22

• Manufacturer Part Number: CY7C1520V18-250BZC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1520V18-250BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 72M (2M x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Capacitance
Tested initially and after any design or process change that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Note
Document Number: 38-05563 Rev. *E
C
C
C
20. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, V
Parameter
Parameter
IN
CLK
O
levels of 0.25V to 1.25V, and output loading of the specified I
Θ
Θ
JA
JC
OUTPUT
Device
Under
Test
V
REF
ZQ
Input Capacitance
Clock Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
(a)
Z
RQ =
250Ω
0.75V
0
= 50Ω
Description
Description
V
REF
R
L
= 0.75V
= 50Ω
Figure 4. AC Test Loads and Waveforms
INCLUDING
T
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
Device
Under
Test
OUTPUT
A
JIG AND
OL
SCOPE
= 25°C, f = 1 MHz, V
V
/I
REF
OH
ZQ
and load capacitance shown in (a) of
0.75V
RQ =
250Ω
(b)
Test Conditions
Test Conditions
V
REF
= 0.75V
DD
R = 50Ω
5 pF
= 1.8V, V
CY7C1516V18, CY7C1527V18
CY7C1518V18, CY7C1520V18
0.25V
DDQ
AC Test Loads and
= 1.5V
REF
1.25V
= 0.75V, RQ = 250Ω, V
Slew Rate = 2 V/ns
ALL INPUT PULSES
0.75V
Waveforms.
165 FBGA
Package
Max
16.3
5.5
8.5
2.1
6
DDQ
[20]
= 1.5V, input pulse
Page 22 of 31
°C/W
°C/W
Unit
Unit
pF
pF
pF
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