CY7C1474V25-200BGXI Cypress Semiconductor Corp, CY7C1474V25-200BGXI Datasheet - Page 23

• Manufacturer Part Number: CY7C1474V25-200BGXI
• Description: CY7C1474V25-200BGXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1474V25-200BGXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (1M x 72)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 209-FBGA
• Density: 72Mb
• Access Time (max): 3ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 2.5V
• Address Bus: 20b
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 8
• Supply Current: 450mA
• Operating Supply Voltage (min): 2.375V
• Operating Supply Voltage (max): 2.625V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 209
• Word Size: 72b
• Number Of Words: 1M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Read/Write/Timing
Notes
Document Number: 38-05290 Rev. *L
22. For this waveform ZZ is tied LOW.
23. When CE is LOW, CE
24. Order of the burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
Data
BW
CEN
CLK
WE
OE
CE
x
t
t
t
CENS
CES
AS
WRITE
D(A1)
1
A1
is LOW, CE
[22, 23, 24]
1
t
t
CENH
t
AH
CEH
WRITE
D(A2)
2
is HIGH and CE
2
A2
t
CH
t CYC
t
DS
t
CL
D(A2+1)
BURST
WRITE
D(A1)
3
3
t
DH
is LOW. When CE is HIGH,CE
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
Q(A4)
READ
A4
5
t
t
CO
CLZ
1
is HIGH or CE
UNDEFINED
Q(A4+1)
BURST
READ
Q(A3)
6
t
DOH
t
OEHZ
2
is LOW or CE
WRITE
D(A5)
Q(A4)
A5
7
t
OEV
t
OELZ
3
Q(A6)
is HIGH.
Q(A4+1)
READ
A6
8
t
t
DOH
CHZ
WRITE
D(A7)
CY7C1470V25
CY7C1472V25
CY7C1474V25
D(A5)
9
A7
DESELECT
Page 23 of 31
10
Q(A6)
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