CY7C1470BV33-167BZXC Cypress Semiconductor Corp, CY7C1470BV33-167BZXC Datasheet - Page 22
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CY7C1470BV33-167BZXC
Manufacturer Part Number
CY7C1470BV33-167BZXC
Description
CY7C1470BV33-167BZXC
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1470BV33-167AXI.pdf
(31 pages)
Specifications of CY7C1470BV33-167BZXC
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1470BV33-167BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Electrical Characteristics
Over the Operating Range
Note
Document #: 001-15031 Rev. *G
I
I
I
I
I
15. The operation current is calculated with 50% read cycle and 50% write cycle.
DD
SB1
SB2
SB3
SB4
Parameter
[15]
V
Automatic CE
Power Down
Current—TTL Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—TTL Inputs
DD
Operating Supply
Description
[13, 14]
(continued)
V
f = f
Max. V
V
f = f
Max. V
V
= 0
Max. V
V
= f
Max. V
V
DD
IN
IN
IN
IN
MAX
MAX
MAX
≤ 0.3V or V
≤ 0.3V or V
≥ V
≥ V
= Max., I
DD
DD
DD
= 1/t
DD
IH
IH
= 1/t
= 1/t
, Device Deselected,
, Device Deselected,
, Device Deselected,
, Device Deselected,
or V
or V
CYC
CYC
CYC
OUT
IN
IN
IN
IN
≤ V
≤ V
> V
> V
= 0 mA,
IL
IL
Test Conditions
DDQ
DDQ
,
, f = 0
− 0.3V, f
− 0.3V, f
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
CY7C1472BV33, CY7C1474BV33
Min
CY7C1470BV33
Max
500
500
450
245
245
245
120
245
245
245
135
Page 22 of 31
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
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