CY7C1470BV33-167BZXC Cypress Semiconductor Corp, CY7C1470BV33-167BZXC Datasheet - Page 21

• Manufacturer Part Number: CY7C1470BV33-167BZXC
• Description: CY7C1470BV33-167BZXC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470BV33-167BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC to Outputs in Tri-State.................... –0.5V to V
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch Up Current ................................................... > 200 mA
Operating Range
Electrical Characteristics
Over the Operating Range
Notes
Document #: 001-15031 Rev. *G
Commercial
Industrial
V
V
V
V
V
V
I
I
13. Overshoot: V
14. T
X
OZ
Parameter
DD
DDQ
OH
OL
IH
IL
Range
power up
: assumes a linear ramp from 0V to V
IH
–40°C to +85°C
(AC) < V
Temperature
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current GND ≤ V
0°C to +70°C
Ambient
DD
DDQ
Description
DD
Relative to GND ........–0.5V to +4.6V
+1.5V (pulse width less than t
Relative to GND.......–0.5V to +V
[13, 14]
3.3V –5%/+10%
[13]
[13]
V
DD
DD
For 3.3V IO
For 2.5V IO
For 3.3V IO, I
For 2.5V IO, I
For 3.3V IO, I
For 2.5V IO, I
For 3.3V IO
For 2.5V IO
For 3.3V IO
For 2.5V IO
GND ≤ V
Input = V
Input = V
Input = V
Input = V
(min.) within 200 ms. During this time V
CYC
DDQ
/2). Undershoot: V
DD
2.5V – 5%
I
I
SS
DD
SS
DD
≤ V
≤ V
to V
V
+ 0.5V
+ 0.5V
DDQ
OH
OH
OL
OL
DDQ
DDQ,
DD
= 8.0 mA
= 1.0 mA
DD
= −1.0 mA
= −4.0 mA
Output Disabled
Test Conditions
IL
(AC)> –2V (pulse width less than t
Neutron Soft Error Immunity
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
cation Note AN 54908 “Accelerated Neutron SER Testing and Calculation of
Terrestrial Failure Rates”
Parameter
IH
< V
CY7C1472BV33, CY7C1474BV33
DD
2
, 95% confidence limit calculation. For more details refer to Appli-
and V
Logical Multi
Single Event
Description
DDQ
Bit Upsets
Single Bit
Latch up
Logical
Upsets
< V
DD
.
CYC
/2).
Test Con-
ditions
25°C
25°C
85°C
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–5
CY7C1470BV33
Typ
361
0
0
V
V
DD
DD
2.625
Max
V
3.6
0.4
0.4
0.8
0.7
30
+ 0.3V
+ 0.3V
DD
5
5
5
Page 21 of 31
Max*
0.01
394
0.1
Unit
Unit
FIT/
FIT/
FIT/
Dev
μA
μA
μA
μA
μA
μA
Mb
Mb
V
V
V
V
V
V
V
V
V
V
V
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