CY7C1470BV33-167AXCT Cypress Semiconductor Corp, CY7C1470BV33-167AXCT Datasheet - Page 19

• Manufacturer Part Number: CY7C1470BV33-167AXCT
• Description: CY7C1470BV33-167AXCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470BV33-167AXCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65 °C to +150 °C
Ambient Temperature with
Power Applied .......................................... –55 °C to +125 °C
Supply Voltage on V
Supply Voltage on V
DC to Outputs in Tri-State..................–0.5 V to V
DC Input Voltage ................................. –0.5 V to V
Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-15032 Rev. *H
V
V
V
V
V
V
I
I
I
I
I
15. Overshoot: V
16. T
17. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
SB1
SB2
DD
DDQ
OH
OL
IH
IL
Parameter
[17]
Power-up
: assumes a linear ramp from 0 V to V
IH
(AC) < V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current GND  V
V
Automatic CE
Power Down
Current—TTL Inputs
Automatic CE
Power Down
Current—CMOS Inputs
DD
DD
DDQ
Operating Supply
Description
DD
Relative to GND ......–0.5 V to +3.6 V
+1.5 V (pulse width less than t
Relative to GND ..... –0.5 V to +V
[15, 16]
[15]
[15]
DD
For 2.5 V IO
For 2.5 V IO, I
For 2.5 V IO, I
For 2.5 V IO
For 2.5 V IO
GND  V
Input = V
Input = V
Input = V
Input = V
V
f = f
Max. V
V
f = f
Max. V
V
V
(min.) within 200 ms. During this time V
DD
IN
IN
IN
MAX
MAX
 V
 0.3 V or
> V
= Max, I
CYC
DDQ
DD
DD
IH
DDQ
DD
= 1/t
= 1/t
I
SS
DD
SS
DD
I
/2). Undershoot: V
, Device Deselected,
, Device Deselected,
or V
 V
 V
+ 0.5 V
+ 0.5 V
0.3 V, f = 0
OUT
CYC
CYC
DDQ
DDQ,
IN
OH
OL
DD
 V
= 0 mA,
=1.0 mA
=1.0 mA
Output Disabled
Test Conditions
IL
,
IL
(AC) > –2 V (pulse width less than t
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
< V
CY7C1472BV25, CY7C1474BV25
DD
and V
–40 °C to +85 °C
0 °C to +70 °C 2.5 V – 5% / +5% 2.5 V – 5% to
Temperature
DDQ
Ambient
< V
DD
.
CYC
/2).
2.375
2.375
–0.3
Min
–30
2.0
1.7
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
CY7C1470BV25
V
DD
V
DD
2.625
Max
V
450
450
400
200
200
200
120
0.4
0.7
+ 0.3 V
30
DD
–
5
–
5
–
5
Page 19 of 28
V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
V
V
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