CY7C1460AV25-167BZXI Cypress Semiconductor Corp, CY7C1460AV25-167BZXI Datasheet - Page 15

• Manufacturer Part Number: CY7C1460AV25-167BZXI
• Description: CY7C1460AV25-167BZXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1460AV25-167BZXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 36M (1M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.5 V TAP AC Test Conditions
Input pulse levels ...............................................V
Input rise and fall time ....................................................1 ns
Input timing reference levels.......................... ..............1.25 V
Output reference levels ............................................... 1.25 V
Test load termination supply voltage ........................... 1.25 V
2.5 V TAP AC Output Load Equivalent
TAP DC Electrical Characteristics and Operating Conditions
(0 °C < T
Identification Register Definitions
Document Number: 38-05354 Rev. *G
V
V
V
V
V
V
I
Revision number (31:29)
Device depth (28:24)
Architecture/memory type(23:18)
Bus width/density(17:12)
Cypress JEDEC ID code (11:1)
ID register presence indicator (0)
Note
X
14. All voltages referenced to V
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDO
Instruction Field
A
< +70 °C; V
Z = 50
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input load current
O
DD
SS
= 2.5 V ± 0.125 V unless otherwise noted)
Description
(GND).
CY7C1460AV25
1.25V
00000110100
(1 M × 36)
001000
100111
01011
000
20pF
50
1
I
I
I
I
GND  V
OH
OH
OL
OL
= 1.0 mA
= 100 A
= –1.0 mA
= –100 A
SS
to 2.5 V
I
 V
CY7C1462AV25
00000110100
DDQ
(2 M × 18)
Test Conditions
001000
010111
01011
000
1
[14]
1.8 V TAP AC Test Conditions
Input pulse levels.................................... 0.2 V to V
Input rise and fall time .....................................................1 ns
Input timing reference levels.......................................... 0.9 V
Output reference levels ................................................. 0.9 V
Test load termination supply voltage ............................. 0.9 V
1.8 V TAP AC Output Load Equivalent
V
V
V
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
CY7C1464AV25
= 2.5 V
= 2.5 V
= 1.8 V
= 2.5 V
= 2.5 V
= 1.8 V
= 2.5 V
= 1.8 V
= 2.5 V
= 1.8 V
00000110100
(512 K × 72)
TDO
001000
110111
01011
000
1
Z = 50
Describes the version number
Reserved for internal use
Defines memory type and
Defines width and density
Allows unique identification of
Indicates the presence of an ID
O
architecture
SRAM vendor
register
1.26
–0.3
–0.3
Min
1.7
2.1
1.6
1.7
–5
–
–
–
Description
V
V
CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
DD
DD
Max
0.36
0.4
0.2
0.2
0.7
0.9V
–
–
–
5
+ 0.3
+ 0.3
20pF
50
Page 15 of 29
DDQ
Unit
A
V
V
V
V
V
V
V
V
V
V
– 0.2
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