CY7C1460AV25-250AXCT Cypress Semiconductor Corp, CY7C1460AV25-250AXCT Datasheet

IC SRAM 36MBIT 250MHZ 100LQFP

CY7C1460AV25-250AXCT

Manufacturer Part Number
CY7C1460AV25-250AXCT
Description
IC SRAM 36MBIT 250MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1460AV25-250AXCT

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
36M (1M x 36)
Speed
250MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1460AV25-250AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Cypress Semiconductor Corporation
Document #: 38-05354 Rev. *D
Features
Logic Block Diagram–CY7C1460AV25 (1M x 36)
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
• Internally self-timed output buffer control to eliminate
• Fully registered (inputs and outputs) for pipelined
• Byte Write capability
• 2.5V core power supply
• 2.5V/1.8V I/O power supply
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• CY7C1460AV25, CY7C1462AV25 available in
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• Burst capability—linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
— Available speed grades are 250, 200 and 167 MHz
the need to use asynchronous OE
operation
— 2.6 ns (for 250-MHz device)
JEDEC-standard lead-free 100-pin TQFP package,
lead-free and non-lead-free 165-ball FBGA package.
CY7C1464AV25 available in lead-free and non-lead-free
209-ball FBGA package
CLK
CEN
A0, A1, A
ADV/LD
MODE
BW
BW
BW
BW
C
WE
CE1
CE2
CE3
OE
ZZ
a
b
c
d
WRITE ADDRESS
REGISTER 1
REGISTER 0
ADDRESS
CONTROL
READ LOGIC
SLEEP
AND DATA COHERENCY
Pipelined SRAM with NoBL™ Architecture
WRITE REGISTRY
CONTROL LOGIC
WRITE ADDRESS
ADV/LD
REGISTER 2
198 Champion Court
C
A1
A0
36-Mbit (1M x 36/2M x 18/512K x 72)
D1
D0
BURST
LOGIC
Q1
Q0
A1'
A0'
DRIVERS
WRITE
Functional Description
The CY7C1460AV25/CY7C1462AV25/CY7C1464AV25 are
2.5V, 1M x 36/2M x 18/512 x 72 Synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL™) logic, respectively.
They are designed to support unlimited true back-to-back
Read/Write
CY7C1460AV25/CY7C1462AV25/CY7C1464AV25
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read
CY7C1460AV25/CY7C1462AV25/CY7C1464AV25
pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle. Write operations are controlled by the
Byte
BW
CY7C1462AV25) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
a
–BW
REGISTER 1
Write
MEMORY
ARRAY
INPUT
d
San Jose
E
for
operations
Selects
M
N
A
S
E
S
E
P
S
CY7C1460AV25
,
E
CA 95134-1709
REGISTER 0
INPUT
(BW
D
A
A
R
N
G
T
S
T
E
E
I
with
transitions.
a
E
–BW
O
U
U
U
T
P
T
B
F
F
E
R
S
E
Revised June 22, 2006
no
h
CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
and
for
DQs
DQP
DQP
DQP
DQP
1
wait
, CE
a
b
c
d
CY7C1464AV25,
BW
2
, CE
408-943-2600
states.
a
–BW
3
) and an
b
The
The
are
are
for
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Related parts for CY7C1460AV25-250AXCT

CY7C1460AV25-250AXCT Summary of contents

Page 1

... CY7C1464AV25 available in lead-free and non-lead-free 209-ball FBGA package • IEEE 1149.1 JTAG-Compatible Boundary Scan • Burst capability—linear or interleaved burst order • “ZZ” Sleep Mode option and Stop Clock option Logic Block Diagram–CY7C1460AV25 (1M x 36) ADDRESS A0, A1, A REGISTER 0 MODE CLK ...

Page 2

... REGISTER A0' BURST D0 Q0 LOGIC ADV/LD C WRITE ADDRESS REGISTER 2 WRITE REGISTRY MEMORY AND DATA COHERENCY WRITE ARRAY CONTROL LOGIC DRIVERS INPUT REGISTER 1 READ LOGIC Sleep Control 250 MHz 200 MHz 2.6 3.2 435 385 120 120 CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 DQs DQP T ...

Page 3

... DQb DQa 18 63 DQa DQb DDQ 20 61 DDQ DQa DQb 22 59 DQa DQb 23 58 DQa DQPb 24 57 DQa DDQ 54 DDQ DQa DQa DQPa CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 DDQ DQP 74 DQa 73 DQa DDQ DQa 69 DQa DQa 63 DQa DDQ DQa 59 DQa DDQ ...

Page 4

... DDQ DDQ DDQ DDQ N DQP DDQ P NC/144M NC/72M MODE NC/576M NC/1G A CE2 DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ N DQP DDQ P NC/144M NC/72M MODE A Document #: 38-05354 Rev. *D CY7C1460AV25 (1M × 36 CEN CLK TDI A1 TDO TCK TMS CY7C1462AV25 (2M × 18 CEN ...

Page 5

... DD DD DDQ MODE A NC/72M TDI Pin Description controls DQ a and DQP , BW controls DQ and DQP and DQP BW controls DQ and DQP CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 DQb DQb 3 BWS DQb BWS DQb b f BWS BWS DQb DQb DQb DQb DQPf DQPb DDQ DDQ V DQf V DQf ...

Page 6

... The direction of the pins is X –DQ are placed in a tri-state condition. The outputs are automati controlled DQP is controlled controlled DQP is controlled DQP is controlled CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 . During [31:0] , DQP is controlled DQP is controlled Page [+] Feedback ...

Page 7

... HIGH on the subsequent clock rise, the chip enables ( and counter is incremented. The correct BW (BW CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 , CE 1 for CY7C1464AV25, a,b,c,d,e,f,g,h for CY7C1460AV25 and DQ /DQP a,b a,b for CY7C1464AV25, a,b,c,d,e,f,g,h for CY7C1460AV25 and DQ /DQP a,b a,b for CY7C1464AV25, BW for a,b,c,d for CY7C1462AV25) signals ...

Page 8

... CY7C1460AV25, BW for CY7C1460AV25 and BW a,b,c,d CY7C1462AV25) inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” ...

Page 9

... Partial Write Cycle Description Function (CY7C1460AV25) Read Write – No bytes written Write Byte a – (DQ and DQP ) a a Write Byte b – (DQ and DQP ) b b Write Bytes b, a Write Byte c – (DQ and DQP ) c c Write Bytes c, a Write Bytes c, b Write Bytes Write Byte d – (DQ ...

Page 10

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1460AV25/CY7C1462AV25/CY7C1464AV25 incor- porates a serial boundary scan test access port (TAP). This part is fully compliant with 1149.1. The TAP operates using JEDEC-standard 2.5V/1.8V I/O logic level. The CY7C1460AV25/CY7C1462AV25/CY7C1464AV25 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register ...

Page 11

... Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. Document #: 38-05354 Rev. *D CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO pins when the TAP controller Shift-DR state ...

Page 12

... Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions CYC TL t TMSS t TMSH t TDIS t TDIH t TDOX DON’T CARE UNDEFINED [9, 10] Over the Operating Range Description / ns CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 TDOV Min. Max. Unit MHz ...

Page 13

... I DDQ CY7C1462AV25 CY7C1464AV25 (1M ×36) (2M ×18) (512K ×72) 000 000 000 01011 01011 01011 001000 001000 001000 100111 010111 110111 00000110100 00000110100 1 1 CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 – 0.2 DDQ 0.9V 50Ω 50Ω 20pF O Min. Max. Unit 1.7 V 2.1 V 1.6 V 0.4 V 0 ...

Page 14

... Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document #: 38-05354 Rev. *D Bit Size (x36) Bit Size (x18 – – Description CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 Bit Size (x72 – 138 Page [+] Feedback ...

Page 15

... FBGA Boundary Scan Order CY7C1460AV25 (1M x 36), CY7C1462AV25 (2M x 18) Bit# Ball ID Bit N10 28 4 P11 P10 34 10 R10 35 11 R11 36 12 H11 37 13 N11 38 14 M11 39 15 L11 40 16 K11 41 17 J11 42 18 M10 43 19 L10 44 20 K10 45 21 J10 46 22 ...

Page 16

... C2 A11 91 C1 A10 100 H2 C7 101 H1 B7 102 J2 A7 103 J1 D6 104 K1 G6 105 N6 CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 Bit# Ball ID 106 K3 107 K4 108 K6 109 K2 110 L2 111 L1 112 M2 113 M1 114 N2 115 N1 116 P2 117 P1 118 R2 119 R1 120 T2 121 T1 122 U2 123 U1 124 V2 125 V1 126 W2 ...

Page 17

... All speed grades DD ≥ V ≤ /2), undershoot: V (AC)> –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < V and CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 Ambient Temperature DDQ 0°C to +70°C 2.5V –5%/+5% 1. Min. Max. 2.375 2.625 2.375 V DD 1.7 1.9 2.0 1 ...

Page 18

... V OUTPUT DDQ GND 351Ω INCLUDING JIG AND SCOPE ( 1667Ω 2.5V V DDQ OUTPUT GND 1538Ω INCLUDING JIG AND SCOPE (b) CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 165 FBGA 209 FBGA Max. Max. Unit 165 FBGA 209 FBGA Package Package Unit 20.8 25.31 ° ...

Page 19

... V minimum initially, before a Read or Write operation can be DD and t is less than t to eliminate bus contention between SRAMs when sharing the same EOLZ CHZ CLZ = 1.8V. DDQ CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 –200 –167 Max. Min. Max. Unit ...

Page 20

... Q(A3) Q(A4) READ D(A5) D(A2+1) Q(A4+1) DON’T CARE UNDEFINED D(A1) Q(A2) Q(A3) READ WRITE STALL Q(A3) D(A4) DON’T CARE is LOW. When CE is HIGH,CE is HIGH CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 OEV CHZ Q(A4+1) D(A5) Q(A6) t DOH t OELZ READ WRITE DESELECT Q(A6) D(A7 ...

Page 21

... Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device. 28. I/Os are in High-Z when exiting ZZ sleep mode. Document #: 38-05354 Rev ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 Page [+] Feedback ...

Page 22

... CY7C1460AV25-167AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1462AV25-167AXC CY7C1460AV25-167BZC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) CY7C1462AV25-167BZC CY7C1460AV25-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) Lead-Free CY7C1462AV25-167BZXC CY7C1464AV25-167BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) CY7C1464AV25-167BGXC CY7C1460AV25-167AXI 51-85050 100-Pin Thin Quad Flat Pack ( ...

Page 23

... CY7C1460AV25-250AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1462AV25-250AXC CY7C1460AV25-250BZC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) CY7C1462AV25-250BZC CY7C1460AV25-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) Lead-Free CY7C1462AV25-250BZXC CY7C1464AV25-250BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) CY7C1464AV25-250BGXC CY7C1460AV25-250AXI 51-85050 100-Pin Thin Quad Flat Pack ( ...

Page 24

... BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS A CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 1.40±0.05 12°±1° SEE DETAIL (8X) 0 ...

Page 25

... Package Diagrams (continued) TOP VIEW PIN 1 CORNER SEATING PLANE C Document #: 38-05354 Rev. *D 165-ball FBGA ( 1.4 mm) (51-85165 0.15(4X) CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 PIN 1 CORNER BOTTOM VIEW Ø0. Ø0. Ø0.45±0.05(165X 1.00 5.00 10.00 B 15.00±0.10 51-85165-*A Page [+] Feedback ...

Page 26

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 209-ball FBGA ( 1.76 mm) (51-85167) CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 ...

Page 27

... Document History Page Document Title: CY7C1460AV25/CY7C1462AV25/CY7C1464AV25 36-Mbit (1-Mbit x 36/2-Mbit x 18/512K x 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05354 REV. ECN No. Issue Date ** 254911 See ECN *A 303533 See ECN *B 331778 See ECN *C 417547 See ECN *D 473650 See ECN Document #: 38-05354 Rev. *D Orig ...

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