CY7C1371D-100AXCT Cypress Semiconductor Corp, CY7C1371D-100AXCT Datasheet - Page 21

• Manufacturer Part Number: CY7C1371D-100AXCT
• Description: CY7C1371D-100AXCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1371D-100AXCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC voltage applied to outputs
in tri-state...........................................–0.5 V to V
Electrical Characteristics
Over the Operating Range
Notes
Document Number: 38-05556 Rev. *I
V
V
V
V
V
V
I
I
I
I
I
I
17. Overshoot: V
18. T
Parameter
X
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0 V to V
Power supply voltage
IO supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
V
current
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
IH
DD
(AC) < V
operating supply
Description
DD
DDQ
DD
relative to GND ........–0.5 V to +4.6 V
+ 1.5 V (Pulse width less than t
relative to GND....... –0.5 V to +V
[17, 18]
[17]
[17]
for 3.3 V IO
for 2.5 V IO
for 3.3 V IO, I
for 2.5 V IO, I
for 3.3 V IO, I
for 2.5 V IO, I
for 3.3 V IO
for 2.5 V IO
for 3.3 V IO
for 2.5 V IO
GND  V
Input = V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0, inputs static
V
V
f = f
V
V
f = 0, inputs static
DD
DD
IN
DD
IN
DD
IN
DD
IN
DD
(min) within 200 ms. During this time V
MAX
MAX
MAX
 V
 0.3 V or V
 0.3 V or V
 V
= Max, device deselected, or
= Max, I
= Max, device deselected,
= Max, device deselected,
= Max, device deselected,
IH
DD
, inputs switching
, inputs switching
= 1/t
I
SS
DD
SS
DD
or V
DDQ
CYC
 V
– 0.3 V or V
OUT
CYC
/2), undershoot: V
OH
OH
OL
OL
DDQ
IN
+ 0.5 V
IN
IN
= 8.0 mA
= 1.0 mA
 V
= –4.0 mA
= –1.0 mA
= 0 mA,
> V
> V
DD
IL
Test Conditions
DD
DDQ
IN
 0.3 V,
– 0.3 V,
– 0.3 V
IL
(AC) > –2 V (Pulse width less than t
DC input voltage .................................. –0.5 V to V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage.......................................... > 2001 V
(MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
All speeds
All Speeds
7.5 ns cycle, 133 MHz
10 ns cycle, 100 MHz
7.5 ns cycle, 133 MHz
10 ns cycle, 100 MHz
7.5 ns cycle, 133 MHz
10 ns cycle, 100 MHz
< V
DD
and V
–40 °C to +85 °C
0 °C to +70 °C
Temperature
DDQ
Ambient
< V
DD
.
CYC
/2).
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–
–
–
–
–
–
–
–
–
–
–
–
3.3 V– 5% /
+ 10%
V
DD
V
V
DD
DD
CY7C1371D
CY7C1373D
2.625
Max
V
210
175
140
120
130
110
3.6
0.4
0.4
0.8
0.7
30
70
80
+ 0.3 V
+ 0.3 V
–
–
5
–
5
–
DD
Page 21 of 33
DD
2.5 V – 5%
to V
V
+ 0.5 V
Unit
mA
mA
mA
mA
mA
mA
mA
mA
DDQ
A
A
A
A
A
V
V
V
V
V
V
V
V
V
V
V
DD
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