CY7C1339G-133AXI Cypress Semiconductor Corp, CY7C1339G-133AXI Datasheet - Page 9

• Manufacturer Part Number: CY7C1339G-133AXI
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1339G-133AXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC voltage applied to outputs
in tri-state...........................................–0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 38-05520 Rev. *I
V
V
V
V
V
V
I
I
I
I
I
Notes
Parameter
X
OZ
DD
SB1
SB2
10. Overshoot: V
11. TPower-up: Assumes a linear ramp from 0 V to V
DD
DDQ
OH
OL
IH
IL
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE Input = V
Input current of ZZ
Output leakage current GND ≤ V
V
current
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
IH
DD
(AC) < V
operating supply
Description
DD
DDQ
DD
relative to GND ........–0.5 V to +4.6 V
relative to GND....... –0.5 V to +V
+ 1.5 V (Pulse width less than t
[10, 11]
[10]
[10]
for 3.3 V I/O, I
for 2.5 V I/O, I
for 3.3 V I/O, I
for 2.5 V I/O, I
for 3.3 V I/O
for 2.5 V I/O
for 3.3 V I/O
for 2.5 V I/O
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0
DD
DD
IN
DD
IN
MAX
≥ V
MAX
≤ 0.3 V or V
DD
= Max, I
= Max, device deselected,
= Max, device deselected,
(min) within 200 ms. During this time V
IH
= 1/t
= 1/t
I
SS
DD
SS
DD
I
or V
≤ V
≤ V
DDQ
CYC
OUT
CYC
CYC
DDQ
DDQ,
IN
OH
OH
OL
OL
/2), undershoot: V
+ 0.5 V
IN
≤ V
= 8.0 mA
= 1.0 mA
= 0 mA,
= –4.0 mA
= –1.0 mA
> V
output disabled
DD
IL
Test Conditions
DDQ
Commercial
Automotive 7.5-ns cycle, 133 MHz
Industrial/
– 0.3 V,
IL
(AC) > –2 V (Pulse width less than t
DC input voltage .................................. –0.5 V to V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Commercial
Industrial
Automotive
Range
IH
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
All speeds
< V
DD
and V
–40 °C to +125 °C
–40 °C to +85 °C
0 °C to +70 °C
Temperature
DDQ
Ambient
< V
DD
.
CYC
/2).
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3.3 V – 5% /
+ 10%
V
DD
V
V
CY7C1339G
DD
DD
Max
V
325
265
240
225
120
100
115
110
3.6
0.4
0.4
0.8
0.7
30
90
40
+ 0.3 V
+ 0.3 V
DD
–
–
5
–
5
–
5
2.5 V – 5%
DD
Page 9 of 21
to V
V
+ 0.5 V
DDQ
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
DD
V
V
V
V
V
V
V
V
V
V
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