CY7C1315BV18-200BZXC Cypress Semiconductor Corp, CY7C1315BV18-200BZXC Datasheet - Page 30

SRAM (Static RAM)

CY7C1315BV18-200BZXC

Manufacturer Part Number
CY7C1315BV18-200BZXC
Description
SRAM (Static RAM)
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1315BV18-200BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
18M (512K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1315BV18-200BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document History Page
Document Number: 38-05620 Rev. *F
Rev. ECN No.
Document Title: CY7C1311BV18/CY7C1911BV18/CY7C1313BV18/CY7C1315BV18, 18-Mbit QDR™-II SRAM 4-Word Burst
Architecture
Document Number: 38-05620
*A
*B
*C
**
252474
325581
413997
472384
Submission
See ECN
See ECN
See ECN
See ECN
Date
Change
Orig. of
NXR
NXR
SYT
SYT
Description of Change
New data sheet
Removed CY7C1911BV18 from the title
Included 300-MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for I
Replaced the TBDs on the Thermal Characteristics Table to 
= 5.91C/W
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
(13 x 15 x 1.4 mm)
Added Lead-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per availability
Converted from Preliminary to Final
Added CY7C1911BV18 to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North
First Street” to “198 Champion Court”
Changed C/C Description in the features section
Added power-up sequence details and waveforms
Added foot notes# 17, 18, 19 on page# 19
Changed the description of I
page# 20
Modified the I
Modified test condition in Footnote # 22 on page# 20 from V
V
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
Modified the ZQ Definition from Alternately, this pin can be connected directly to V
to Alternately, this pin can be connected directly to V
Included Maximum Ratings for Supply Voltage on V
Changed the Maximum Ratings for DC Input Voltage from V
Changed t
from 10 ns to 5 ns and changed t
Characteristics table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from – 10 C
to +85 C to – 55 C to +125 C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
DDQ
Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
< V
DD
TH
and t
DD
and I
TL
DD
from 40 ns to 20 ns, changed t
SB
and I
values
X
SB1
from Input Load Current to Input Leakage Current on
CY7C1313BV18, CY7C1315BV18
CY7C1311BV18, CY7C1911BV18
specs
TDOV
from 20 ns to 10 ns in TAP AC Switching
DDQ
TMSS
DDQ
Relative to GND
, t
TDIS
DDQ
DDQ
JA
, t
= 28.51C/W and 
< V
CS
to V
, t
DD
DD
TMSH
to
Page 30 of 32
, t
TDIH
, t
DD
CH
JC
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