CY7C1315BV18-200BZXC Cypress Semiconductor Corp, CY7C1315BV18-200BZXC Datasheet - Page 17

• Manufacturer Part Number: CY7C1315BV18-200BZXC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-200BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 38-05620 Rev. *F
V
V
V
V
V
V
I
12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the
13. Overshoot: V
14. All Voltage referenced to Ground.
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDI
TCK
TMS
IH
(AC) < V
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
DDQ
Selection
Circuitry
+ 0.85V (Pulse width less than t
[12, 13, 14]
Description
106
31
Boundary Scan Register
CYC
30
Identification Register
.
Instruction Register
/2), Undershoot: V
29
.
TAP Controller
.
.
.
.
IL
(AC) >
I
I
I
I
GND  V
OH
OH
OL
OL
Bypass Register
2
2
2
= 2.0 mA
= 100 A

=2.0 mA
=100 A
Test Conditions
1.5V (Pulse width less than t
CY7C1313BV18, CY7C1315BV18
CY7C1311BV18, CY7C1911BV18
1
1
1
I
 V
0
0
0
0
DD
Electrical Characteristics
CYC
Selection
Circuitry
0.65V
/2).
–0.3
Min
1.4
1.6
–5
DD
V
0.35V
DD
Max
Table.
0.4
0.2
5
+ 0.3
DD
Page 17 of 32
TDO
Unit
A
V
V
V
V
V
V
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