CY7C1315BV18-200BZXC Cypress Semiconductor Corp, CY7C1315BV18-200BZXC Datasheet - Page 24

• Manufacturer Part Number: CY7C1315BV18-200BZXC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-200BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
Tested initially and after any design or process change that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Note
Document Number: 38-05620 Rev. *F
C
C
C
22. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250, V
Parameter
Parameter
IN
CLK
O
pulse levels of 0.25V to 1.25V, and output loading of the specified I


JA
JC
OUTPUT
Device
Under
Test
V
REF
ZQ
Input Capacitance
Clock Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
(a)
Z
RQ =
250
0.75V
0
= 50
Description
Description
V
REF
R
L
= 0.75V
= 50
Figure 4. AC Test Loads and Waveforms
INCLUDING
T
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
Device
Under
Test
OUTPUT
A
JIG AND
SCOPE
= 25C, f = 1 MHz, V
V
REF
ZQ
OL
/I
OH
and load capacitance shown in (a) of
0.75V
RQ =
250
(b)
Test Conditions
Test Conditions
V
REF
= 0.75V
DD
R = 50
5 pF
= 1.8V, V
CY7C1313BV18, CY7C1315BV18
CY7C1311BV18, CY7C1911BV18
0.25V
DDQ
= 1.5V
AC Test Loads and
1.25V
Slew Rate = 2 V/ns
ALL INPUT PULSES
0.75V
165 FBGA
Package
Max
18.7
Waveforms.
4.5
5
6
7
DDQ
[22]
Page 24 of 32
= 1.5V, input
°C/W
°C/W
Unit
Unit
pF
pF
pF
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