CY7C1041D-10ZSXIT Cypress Semiconductor Corp, CY7C1041D-10ZSXIT Datasheet - Page 2

• Manufacturer Part Number: CY7C1041D-10ZSXIT
• Description: CY7C1041D-10ZSXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1041D-10ZSXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 18b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 90mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05472 Rev. *E
Selection Guide
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65C to +150C
Ambient Temperature with
Power Applied............................................. –55C to +125C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Electrical Characteristics
Capacitance
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
V
V
V
V
I
I
I
I
I
C
C
Notes:
Parameter
IX
OZ
CC
SB1
SB2
2. Automotive product information is Preliminary.
3. V
4. Tested initially and after any design or process changes that may affect these parameters.
OH
OL
IH
IL
IN
OUT
IL
(min.) = –2.0V and V
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current GND < V
Output Leakage
Current
V
Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
[3]
CC
[4]
[3]
.....................................–0.5V to V
Operating Supply
Description
..................................–0.5V to V
CC
IH
(max) = V
to Relative GND
Input Capacitance
I/O Capacitance
CC
[3]
+ 2V for pulse durations of less than 20 ns.
Description
Over the Operating Range
V
V
GND < V
Disabled
V
f = f
Max. V
V
Max. V
V
f = 0
CC
CC
CC
IN
IN
[3]
MAX
< V
> V
= Min., I
= Min., I
= Max.,
.... –0.5V to +6.0V
CC
CC
IL
CC
Test Conditions
= 1/t
, f = f
I
OUT
-10 (Industrial)
, CE > V
, CE > V
< V
– 0.3V, or V
OH
OL
RC
< V
CC
CC
CC
MAX
10
90
10
= 8.0 mA
= –4.0 mA
CC
+0.5V
+0.5V
IH
CC
, Output
V
– 0.3V,
IN
IN
100 MHz
> V
83 MHz
66 MHz
40 MHz
< 0.3V,
T
A
IH
Test Conditions
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............. ...............................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
= 25C, f = 1 MHz,
Industrial
Automotive
or
V
CC
Range
= 5.0V
Min.
–0.5
-10 (Industrial)
2.4
2.0
–1
–1
-12 (Automotive)
–40C to +125C
–40C to +85C
V
12
95
15
Temperature
CC
Max.
Ambient
0.8
0.4
+1
+1
90
80
70
60
20
10
+ 0.5
[2]
-12 (Automotive)
Min.
–0.5
2.4
2.0
–1
–1
Max.
8
8
5V  0.5
5V  0.5
CY7C1041D
V
V
CC
CC
Max.
0.4
0.8
+1
+1
95
85
75
25
15
Unit
mA
mA
-
ns
+ 0.5
Page 2 of 11
Speed
10 ns
12 ns
Unit
pF
pF
Unit
mA
mA
mA
mA
mA
mA
A
A
V
V
V
V
[+] Feedback