CY7C1021BN-15VXET Cypress Semiconductor Corp, CY7C1021BN-15VXET Datasheet - Page 8
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CY7C1021BN-15VXET
Manufacturer Part Number
CY7C1021BN-15VXET
Description
CY7C1021BN-15VXET
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1021BNL-15ZXI.pdf
(13 pages)
Specifications of CY7C1021BN-15VXET
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
15ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 001-06494 Rev. *C
Notes
12. Data I/O is high impedance if OE or BHE and/or BLE= V
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
ADDRESS
BHE, BLE
DATA I/O
ADDRESS
ADDRESS
BHE,
DATA
WE
CE
BLE
WE
CE
I/O
t
SA
t
SA
Figure 6. Write Cycle No. 2 (BLE or BHE Controlled)
Figure 5. Write Cycle No. 1 (CE Controlled)
IH
.
t
AW
t
AW
t
WC
t
WC
t
t
BW
t
PWE
t
SCE
SCE
t
PWE
t
BW
t
SD
t
SD
CY7C1021BN, CY7C10211BN
[12, 13]
t
HD
t
HD
t
HA
t
HA
Page 8 of 13
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