CY7C027-20AXC Cypress Semiconductor Corp, CY7C027-20AXC Datasheet - Page 8

• Manufacturer Part Number: CY7C027-20AXC
• Description: CY7C027-20AXC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C027-20AXC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Asynchronous
• Memory Size: 512K (32K x 16)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2098; CY7C027-20AXC

Switching Characteristics
Data Retention Mode
The CY7C027/028 and CY7C037/038 are designed with battery
backup in mind. Data retention voltage and supply current are
guaranteed over temperature. The following rules ensure data
retention:
Document #: 38-06042 Rev. *F
t
t
t
t
t
t
1. Chip enable (CE) must be held HIGH during data retention,
2. CE must be kept between V
3. The RAM can begin operation >t
Notes
INS
INR
SOP
SWRD
SPS
SAA
21. t
22. CE = V
INTERRUPT TIMING
SEMAPHORE TIMING
Parameter
within V
the power up and power down transitions.
minimum operating voltage (4.5V).
BDD
is a calculated parameter and is the greater of t
CC
CC
, V
in
to V
= GND to V
INT Set Time
INT Reset Time
SEM Flag Update Pulse (OE or SEM)
SEM Flag Write to Read Time
SEM Flag Contention Window
SEM Address Access Time
CC
– 0.2V.
[20]
CC
, T
A
= 25 C. This parameter is guaranteed but not tested.
CC
– 0.2V and 70% of V
Description
RC
Over the Operating Range
after V
WDD
–t
PWE
CC
(actual) or t
reaches the
CC
DDD
during
–t
SD
(actual).
[14]
(continued)
Min
Timing
V
10
CE
ICC
5
5
CC
-12
Parameter
DR1
[1]
Max
12
12
12
4.5V
CY7C027/028
CY7C037/038
Min
10
5
5
At VCC
Data Retention Mode
Test Conditions
V
CC
-15
V
to V
CC
DR
Max
15
15
15
2.0V
CC
= 2V
– 0.2V
Min
10
[22]
5
5
4.5V
CY7C027/028
CY7C037/038
-20
Max
Max
1.5
20
20
20
V
t
IH
RC
Page 8 of 19
Unit
mA
Unit
ns
ns
ns
ns
ns
ns
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