CY7C026A-15AXI Cypress Semiconductor Corp, CY7C026A-15AXI Datasheet - Page 9

CY7C026A-15AXI

CY7C026A-15AXI

Manufacturer Part Number
CY7C026A-15AXI
Description
CY7C026A-15AXI
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C026A-15AXI

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
256K (16K x 16)
Speed
15ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C026A-15AXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
135
Part Number:
CY7C026A-15AXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Characteristics
Data Retention Mode
The CY7C026A is designed with battery backup in mind. Data
retention voltage and supply current are guaranteed over
temperature. The following rules ensure data retention:
Notes
Document #: 38-06046 Rev. *F
t
t
t
t
t
t
t
t
t
t
t
t
t
t
1. Chip Enable (CE) must be held HIGH during data retention,
2. CE must be kept between V
3. The RAM can begin operation >t
15. Test conditions used are Load 2.
16. t
17. CE = V
BLA
BHA
BLC
BHC
PS
WB
WH
BDD
INS
INR
SOP
SWRD
SPS
SAA
BUSY TIMING
INTERRUPT TIMING
SEMAPHORE TIMING
within V
the power up and power down transitions.
minimum operating voltage (4.5 V).
BDD
[16]
Parameter
is a calculated parameter and is the greater of t
CC
CC
, V
in
to V
= GND to V
[15]
CC
– 0.2 V.
BUSY LOW from address match
BUSY HIGH from address mismatch
BUSY LOW from CE LOW
BUSY HIGH from CE HIGH
Port setup for priority
R/W HIGH after BUSY (Slave)
R/W HIGH after BUSY HIGH (Slave)
BUSY HIGH to data valid
INT set time
INT reset time
SEM flag update pulse (OE or SEM)
SEM flag write to read time
SEM flag contention window
SEM address access time
[15]
CC
, T
A
= 25 C. This parameter is guaranteed but not tested.
CC
– 0.2 V and 70% of V
RC
Over the Operating Range
after V
Description
WDD
CC
–t
reaches the
PWE
(actual) or t
CC
during
DDD
[8]
–t
SD
(continued)
Timing
V
CE
ICC
(actual).
CC
Parameter
DR1
Min
13
10
5
5
5
0
-15
4.5 V
At VCC
Data Retention Mode
Max
Test Conditions
V
15
15
15
15
15
15
15
15
CC
CY7C026A
V
to V
CC
DR
2.0 V
CC
= 2 V
– 0.2 V
Min
15
10
5
0
5
5
[17]
4.5 V
-20
Max
20
20
20
17
20
20
20
20
CY7C026A
Max
1.5
V
t
IH
RC
Page 9 of 20
Unit
Unit
mA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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