CY62157EV30LL-45BVI Cypress Semiconductor Corp, CY62157EV30LL-45BVI Datasheet - Page 8

• Manufacturer Part Number: CY62157EV30LL-45BVI
• Description: CY62157EV30LL-45BVI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62157EV30LL-45BVI

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Density: 8Mb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 19b
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 25mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Word Size: 16b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

Document #: 38-05445 Rev. *H
Switching Waveforms
Figure 6
Figure 7
Notes
20. The device is continuously selected. OE, CE
21. WE is HIGH for read cycle.
22. Address valid before or similar to CE
DATA OUT
CURRENT
ADDRESS
BHE/BLE
SUPPLY
DATA OUT
ADDRESS
CE
CE
V
OE
shows Address Transition Controlled read cycle waveforms.
shows OE Controlled read cycle waveforms.
CC
1
2
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
t
1
LZCE
, BHE, BLE transition LOW and CE
t
LZBE
t
t
ACE
LZOE
1
= V
t
50%
OHA
IL
t
t
DOE
DBE
, BHE, BLE, or both = V
Figure 6. Read Cycle No. 1
Figure 7. Read Cycle No. 2
t
AA
[21, 22]
t
RC
2
transition HIGH.
IL
, and CE
t
RC
RC
[20, 21]
2
= V
IH
.
DATA VALID
CY62157EV30 MoBL
t
HZOE
DATA VALID
t
HZBE
t
HZCE
t
PD
50%
IMPEDANCE
Page 8 of 17
HIGH
I
I
CC
SB
®
[+] Feedback