cy62157e Cypress Semiconductor Corporation., cy62157e Datasheet

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cy62157e

Manufacturer Part Number
cy62157e
Description
8-mbit 512k X 16 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Cypress Semiconductor Corporation
Document #: 38-05695 Rev. *C
Features
Functional Description
The CY62157E is a high-performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
• Very high speed: 45 ns
• Wide voltage range: 4.5V–5.5V
• Ultra-low standby power
• Ultra-low active power
• Ultra-low standby power
• Easy memory expansion with CE
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in Pb-free 44-pin TSOP II and 48-ball VFBGA
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
—Typical Standby current: 2 µA
—Maximum Standby current: 8 µA (Industrial)
— Typical active current: 1.8 mA @ f = 1 MHz
package
A
[1]
A
A
A
A
A
A
A
A
A
A
10
9
8
7
6
5
4
3
2
1
0
1
, CE
2
and OE features
COLUMN DECODER
DATA IN DRIVERS
198 Champion Court
POWER-DOWN
RAM Array
512K x 16
CIRCUIT
®
) in
also has an automatic power-down feature that significantly
reduces power consumption when addresses are not toggling.
The device can also be put into standby mode when
deselected (CE
HIGH). The input/output pins (IO
a high-impedance state when: deselected (CE
LOW), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a write operation (CE
LOW).
Writing to the device is accomplished by taking Chip Enable
(CE
If Byte Low Enable (BLE) is LOW, then data from IO pins (IO
through IO
address pins (A
LOW, then data from IO pins (IO
the location specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE
LOW while forcing the Write Enable (WE) HIGH. If Byte Low
Enable (BLE) is LOW, then data from the memory location
specified by the address pins will appear on IO
High Enable (BHE) is LOW, then data from memory will appear
on IO
for a complete description of read and write modes.
8-Mbit (512K x 16) Static RAM
1
LOW and CE
8
to IO
San Jose
7
15
1
), is written into the location specified on the
LOW and CE
. See the truth table at the back of this data sheet
1
0
HIGH or CE
through A
2
BHE
BLE
HIGH) and Write Enable (WE) input LOW.
,
CA 95134-1709
IO
IO
0
8
–IO
–IO
2
18
2
HIGH) and Output Enable (OE)
BHE
WE
OE
BLE
7
15
). If Byte High Enable (BHE) is
LOW or both BHE and BLE are
CY62157E MoBL
8
1
0
Revised November 21, 2006
through IO
through IO
LOW, CE
CE
CE
2
1
2
CE
CE
0
15
15
through A
HIGH and WE
0
) is written into
2
1
) are placed in
1
408-943-2600
HIGH or CE
to IO
7
. If Byte
18
).
®
2
0
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cy62157e Summary of contents

Page 1

... Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package [1] Functional Description The CY62157E is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL portable applications such as cellular telephones ...

Page 2

... Operating I Speed Range (V) (ns 1MHz CC [4] [4] Typ Max Typ 5.0 5.5 45 1.8 5.0 5.5 55 1.8 CY62157E MoBL VFBGA Top View BHE ...

Page 3

... CE < 0.2V, 2 – 0. < 0.2V 3.60V Test Conditions T = 25° MHz CC(typ) (min) and 200 µs wait time after V CC CY62157E MoBL [6, 7] ........................................–0.5V to 6.0V Ambient [8] Range Temperature V CC Industrial –40°C to +85°C 4. (Automotive) [4] Max Min ...

Page 4

... V > V – 0. < 0. DATA RETENTION MODE V CC(min) V > CDR > 100 µs or stable at V > 100 µ CC(min) CC(min) CY62157E MoBL TSOP II VFBGA Unit 77 72 °C/W 13 8.86 °C/W 90% 90% 10% Fall Time = 1 V/ Unit Ω Ω Ω V [4] ...

Page 5

... Test Loads and Waveforms” section less than less than HZCE LZCE HZBE LZBE HZOE = V , BHE and/or BLE = ® CY62157E MoBL 55 ns Min Max Unit ...

Page 6

... BHE, BLE transition LOW and CE 1 Document #: 38-05695 Rev. *C [16, 17 OHA DBE t DOE DATA VALID 50% , BHE and/or BLE = V , and transition HIGH. 2 ® CY62157E MoBL DATA VALID HZCE t HZBE t HZOE HIGH IMPEDANCE Page [+] Feedback ...

Page 7

... During this period, the IOs are in output state and input signals should not be applied. Document #: 38-05695 Rev SCE PWE VALID DATA [15, 19, 20, 21 SCE PWE VALID DATA , the output remains in a high-impedance state. IH ® CY62157E MoBL Page [+] Feedback ...

Page 8

... BHE/BLE DATA IO See Note 21 Document #: 38-05695 Rev. *C [20, 21 SCE PWE t SD VALID DATA HZWE [20, 21 SCE PWE t SD VALID DATA ® CY62157E MoBL LZWE Page [+] Feedback ...

Page 9

... Data In (IO – Package Diagram Package Type 44-pin Thin Small Outline Package Type II (Pb-free) 44-pin Thin Small Outline Package Type II (Pb-free) 48-ball Very Fine Pitch Ball Grid Array (Pb-free) CY62157E MoBL Mode Power Deselect/Power-Down Standby (I SB Deselect/Power-Down Standby (I SB Deselect/Power-Down Standby (I ...

Page 10

... Package Diagrams Document #: 38-05695 Rev. *C 44-pin TSOP II (51-85087) ® CY62157E MoBL 51-85087-*A Page [+] Feedback ...

Page 11

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 48-ball VFBGA ( mm) (51-85150) A ® CY62157E MoBL BOTTOM VIEW A1 CORNER Ø0. Ø0. Ø ...

Page 12

... Document History Page ® Document Title: CY62157E MoBL , 8-Mbit (512K x 16) Static RAM Document Number: 38-05695 Orig. of REV. ECN NO. Issue Date Change ** 291273 See ECN *A 457689 See ECN *B 467033 See ECN *C 569114 See ECN Document #: 38-05695 Rev. *C Description of Change PCI New data sheet ...

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