CY14B256LA-SP45XI Cypress Semiconductor Corp, CY14B256LA-SP45XI Datasheet - Page 13

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CY14B256LA-SP45XI

Manufacturer Part Number
CY14B256LA-SP45XI
Description
CY14B256LA-SP45XI
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr

Specifications of CY14B256LA-SP45XI

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
45ns
Package Type
SSOP
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Operating Temp Range
-40C to 85C
Pin Count
48
Mounting
Surface Mount
Supply Current
52mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B256LA-SP45XI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY14B256LA-SP45XI
Quantity:
3 000
Part Number:
CY14B256LA-SP45XIT
Manufacturer:
CYRPESS
Quantity:
20 000
AutoStore/Power-Up RECALL
Switching Waveforms
Document Number: 001-54707 Rev. *F
t
t
t
V
t
V
t
t
Notes
HRECALL
STORE
DELAY
VCCRISE
LZHSB
HHHD
21. t
22. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
23. On a Hardware Store and AutoStore initiation, SRAM write operation continues to be enabled for time t
24. These parameters are guaranteed by design and are not tested.
25. Read and Write cycles are ignored during STORE, RECALL, and while V
26. During power-up and power-down, HSB glitches when HSB pin is pulled up through an external resistor.
SWITCH
HDIS
HRECALL
[24]
[24]
[24]
[23]
[22]
Parameters
[24]
[21]
starts from the time V
Read & Write
Inhibited
(RWI)
POWER-
AutoStore
RECALL
HSB OUT
V
UP
SWITCH
V
V
HDIS
CC
CC
POWER-UP
Power-up RECALL duration
STORE cycle duration
Time allowed to complete SRAM write cycle
Low voltage trigger level
V
HSB output disable voltage
HSB to output active time
HSB high active time
rises above V
RECALL
CC
Note
t
VCCRISE
rise time
26
SWITCH.
Figure 9. AutoStore or Power-Up RECALL
Read & Write
t
t
t
LZHSB
HRECALL
HHHD
Description
Note
AutoStore
t
BROWN
DELAY
22
CC
OUT
is below V
t
STORE
POWER-UP
RECALL
SWITCH.
t
DELAY
HRECALL
t
t
HHHD
LZHSB
Read & Write
[25]
.
t
DELAY
Min
150
CY14B256LA
Note
AutoStore
POWER
DOWN
22
CY14B256LA
Note
t
STORE
Max
2.65
500
1.9
20
25
8
5
26
Page 13 of 22
Unit
ms
ms
ns
µs
µs
ns
V
V
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