BLF6G22LS-180PN:11 NXP Semiconductors, BLF6G22LS-180PN:11 Datasheet - Page 4

• Manufacturer Part Number: BLF6G22LS-180PN:11
• Description: BLF6G22LS-180PN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-180PN:11

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Application information
BLF6G22-180PN_22LS-180PN_3
Product data sheet
7.1 Ruggedness in class-AB operation
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
I
The BLF6G22-180PN and BLF6G22LS-180PN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
G
RL
η
ACPR
Symbol Parameter
PAR
Dq
Fig 1.
D
p
in
= 1600 mA; T
O
output peak-to-average ratio P
V
One-tone CW power gain and drain efficiency as functions of load power; typical
values
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
DS
Application information
Application information
DS
= 32 V; I
case
All information provided in this document is subject to legal disclaimers.
= 28 V; I
DS
= 25
Dq
(dB)
= 32 V; I
G
= 1600 mA; f = 2170 MHz.
Rev. 04 — 4 March 2010
p
°
1
1
20
18
16
14
Dq
C; unless otherwise specified; in a class-AB production test circuit.
= 2112.5 MHz; f
= 2162.5 MHz; f
0
= 1600 mA; P
Dq
= 1600 mA; T
50
Conditions
at 0.01 % probability on CCDF
L(AV)
2
2
L
= 2117.5 MHz; f
= 2167.5 MHz; RF performance at V
= 180 W (CW); f = 2170 MHz.
= 115 W;
100
case
Conditions
P
P
P
P
BLF6G22(LS)-180PN
L(AV)
L(AV)
L(AV)
L(AV)
= 25
G
η
= 50 W
= 50 W
= 50 W
= 50 W
D
p
°
150
C; unless otherwise specified; in a
3
P
001aah632
= 2162.5 MHz; f
L
(W)
200
Power LDMOS transistor
60
40
20
0
Min
16.3
-
25
-
(%)
η
D
Min Typ Max Unit
4.05 4.5
Typ
−10
−35
© NXP B.V. 2010. All rights reserved.
17.5 18.7
27.5 -
4
= 2167.5 MHz;
DS
= 32 V;
Max
−6.5
−33
-
4 of 14
Unit
dB
dB
%
dBc
dB