AM29LV320DT90EI AMD (ADVANCED MICRO DEVICES), AM29LV320DT90EI Datasheet - Page 41
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AM29LV320DT90EI
Manufacturer Part Number
AM29LV320DT90EI
Description
Flash Memory IC
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheets
1.AM29LV320DT90EI.pdf
(55 pages)
2.AM29LV320DT90EI.pdf
(55 pages)
3.AM29LV320DT90EI.pdf
(57 pages)
Specifications of AM29LV320DT90EI
Memory Configuration
4M X 8 / 2M X 16 Bit
Package/case
48-TSOP
Supply Voltage Max
3.6V
Leaded Process Compatible
No
Peak Reflow Compatible (260 C)
No
Access Time, Tacc
90nS
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See
November 15, 2004
t
WHWH1
JEDEC
t
t
t
t
t
t
t
t
t
t
WHWH1
WHWH2
t
t
DVWH
WHDX
GHWL
WHEH
WLWH
WHDL
AVWL
WLAX
AVAV
ELWL
Parameter
“Erase And Programming Performance” on page 50
t
WHWH1
t
t
Std.
t
WHWH1
WHWH2
t
t
t
t
t
t
t
GHWL
t
OEPH
t
SR/W
BUSY
t
t
t
t
t
t
t
WPH
ASO
AHT
VCS
WC
DH
WP
AS
AH
DS
CS
CH
RB
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Accelerated Programming Operation,
Word or Byte (Note 2)
Sector Erase Operation (Note 2)
V
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
CC
Setup Time (Note 1)
Am29LV320D
for more information.
Word
Byte
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
90
90
45
45
35
0.7
15
20
30
11
50
90
0
0
0
0
0
0
0
9
7
0
120
120
50
50
50
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ns
41