ADN2525ACPZ-REEL7 Analog Devices Inc, ADN2525ACPZ-REEL7 Datasheet - Page 3

• Manufacturer Part Number: ADN2525ACPZ-REEL7
• Description: IC,Laser Diode/LED Driver,LLCC,16PIN,PLASTIC
• Manufacturer: Analog Devices Inc
• Type: Laser Diode Driver (Fiber Optic)r

Specifications of ADN2525ACPZ-REEL7

• Data Rate: 10.7Gbps
• Number Of Channels: 1
• Voltage - Supply: 3.07 V ~ 3.53 V
• Current - Supply: 39mA
• Current - Modulation: 80mA
• Current - Bias: 100mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-VFQFN, CSP Exposed Pad
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPECIFICATIONS
VCC = VCC
25°C, IMOD = 40 mA.
Table 1.
Parameter
BIAS CURRENT (IBIAS)
MODULATION CURRENT (IMODP, IMODN)
DATA INPUTS (DATAP, DATAN)
BIAS CONTROL INPUT (BSET)
MODULATION CONTROL INPUT (MSET)
BIAS MONITOR (IBMON)
AUTOMATIC LASER SHUTDOWN (ALS)
POWER SUPPLY
See notes on next page.
Bias Current Range
Bias Current while ALS Asserted
Compliance Voltage
Modulation Current Range
Modulation Current While ALS Asserted
Rise Time (20% to 80%)
Fall Time (20% to 80%)
Random Jitter
Deterministic Jitter
Pulse-Width Distortion
Differential |S22|
Compliance Voltage
Input Data Rate
Differential Input Swing
Differential |S11|
Input Termination Resistance
BSET Voltage to IBIAS Gain
BSET Input Resistance
MSET Voltage to IMOD Gain
MSET Input Resistance
IBMON to IBIAS Ratio
Accuracy of IBIAS to IBMON Ratio
V
V
I
I
ALS Assert Time
ALS Negate Time
V
I
I
IL
IH
CC
SUPPLY
IH
IL
CC
5
6
MIN
to VCC
2, 3
3, 4
1
1
MAX
2, 3
2, 3
2, 3
, T
A
= −40°C to +85°C, 50 Ω differential load resistance, unless otherwise noted. Typical values are specified at
Min
10
0.6
0.6
10
VCC − 1.1
0.4
85
75
800
70
800
−5.0
−4.0
−2.5
−2
2.4
−20
0
3.07
Typ
24
24
0.4
7.2
2
−10
−14
−16.8
100
88
1000
10
3.3
39
157
100
1000
Rev. A | Page 3 of 16
Max
100
100
VCC – 1.2
VCC – 0.8
80
0.5
32.5
32.5
0.9
12
5
VCC + 1.1
10.7
1.6
115
120
1200
110
1200
+5.0
+4.0
+2.5
+2
0.8
+20
200
2
10
3.53
45
176
Unit
ps
ps
ps rms
ps p-p
dB
dB
mA
μA
V
V
mA diff
mA diff
ps
dB
V
Gbps
V p-p diff
Ω
mA/V
Ω
mA/V
Ω
μA/mA
%
%
%
%
V
V
μA
μA
μs
μs
V
mA
mA
Test Conditions/Comments
ALS = high
IBIAS = 100 mA
IBIAS = 10 mA
R
ALS = high
Includes pulse-width distortion
PWD = ABS(T
5 GHz < f < 10 GHz, Z
f < 5 GHz, Z
NRZ
Differential ac-coupled
f < 10 GHz, Z
Differential
See Figure 29
10 mA ≤ IBIAS < 20 mA, R
20 mA ≤ IBIAS < 40 mA, R
40 mA ≤ IBIAS < 70 mA, R
70 mA ≤ IBIAS < 100 mA, R
Rising edge of ALS to fall of IBIAS and
IMOD below 10% of nominal; see Figure 2
Falling edge of ALS to rise of IBIAS and
IMOD above 90% of nominal; see Figure 2
V
V
LOAD
BSET
BSET
= V
= V
= 5 Ω to 50 Ω differential
MSET
MSET
0
= 0 V
= 0 V; I
= 50 Ω differential
0
HIGH
= 100 Ω differential
− T
SUPPLY
LOW
0
= 50 Ω differential
)/2
= I
IBMON
IBMON
IBMON
CC
IBMON
+ IMODP + IMODN
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
ADN2525