BZX100A,115 NXP Semiconductors, BZX100A,115 Datasheet - Page 4

• Manufacturer Part Number: BZX100A,115
• Description: DIODE ZENER 100V 310MW SOD323F
• Manufacturer: NXP Semiconductors

Specifications of BZX100A,115

• Package / Case: SC-90, SOD-323F
• Mounting Type: Surface Mount
• Power - Max: 310mW
• Current - Reverse Leakage @ Vr: 200nA @ 75V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Voltage - Zener (nom) (vz): 100V
• Zener Voltage: 100 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 138 mV / K
• Zener Current: 200 mA
• Power Dissipation: 1 W
• Maximum Reverse Leakage Current: 0.2 uA
• Maximum Zener Impedance: 700 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Impedance (max) (zzt): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060843115::BZX100A T/R::BZX100A T/R

NXP Semiconductors
7. Characteristics
BZX100A_1
Product data sheet
Fig 2. Non-repetitive peak reverse power dissipation
P
(W)
ZSM
10
10
10
1
3
2
10
T
as a function of pulse duration; maximum
values
j
= 25 C (prior to surge)
5
10
Table 7.
T
[1]
4
Symbol
V
V
r
I
S
C
R
j
dif
F
Z
Z
d
= 25 C unless otherwise specified.
Pulse test: t
10
Characteristics
Parameter
forward voltage
working voltage
differential resistance
reverse current
temperature coefficient
diode capacitance
3
p
t
p
300 s;
006aab048
(s)
10
Rev. 01 — 30 May 2007
2
0.02.
Fig 3. Forward current as a function of forward
(mA)
Conditions
I
I
I
I
V
I
f = 1 MHz;
V
I
F
F
Z
Z
Z
F
300
200
100
R
R
= 10 mA
= 100 mA
= 1 mA
= 1 mA
= 1 mA
0
= 76 V
= 0 V
T
voltage; typical values
0.6
j
= 25 C
0.7
[1]
0.8
Min
-
-
95
-
-
-
-
Typ
-
-
-
-
-
138
-
Single Zener diode
0.9
BZX100A
© NXP B.V. 2007. All rights reserved.
006aab049
V
F
(V)
Max
0.9
1.1
105
700
0.2
-
70
1.0
Unit
V
V
V
mV/K
pF
A
4 of 10