BYV34-500 NXP Semiconductors, BYV34-500 Datasheet - Page 3

• Manufacturer Part Number: BYV34-500
• Description: Rectifiers RAIL REC-EPI
• Manufacturer: NXP Semiconductors

Specifications of BYV34-500

• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 500 V
• Forward Voltage Drop: 1.35 V
• Recovery Time: 60 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 132 A
• Reverse Current Ir: 50 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BYV34-500,127

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
October 1998
Dual rectifier diodes
ultrafast
SYMBOL PARAMETER
V
I
Q
t
I
V
R
rr
rrm
I
I
F
fr
R
V F
s
F
I
F
Fig.1. Definition of t
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
I
rrm
Fig.2. Definition of V
dI
dt
Q
F
s
t
rr
rr
j
, Q
= 25 ˚C unless otherwise stated
s
and I
fr
V F
10%
rrm
time
time
CONDITIONS
I
I
V
V
I
dI
I
dI
I
dI
I
F
F
F
F
F
F
time
R
R
F
F
F
= 10 A; T
= 20 A
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
100%
/dt = 20 A/µs
/dt = 100 A/µs
/dt = 50 A/µs; T
= V
= V
V
fr
RRM
RRM
; T
2
j
F
R
R
= 150˚C
j
/dt = 10 A/µs
= 100 ˚C
R
≥ 30 V;
≥ 30 V;
≥ 30 V;
Fig.3. Maximum forward dissipation P
Fig.4. Maximum forward dissipation P
diode; sinusoidal current waveform where a = form
12
10
20
15
10
8
6
4
2
0
5
0
j
0
PF / W
0
= 100˚C
diode; square wave where I
PF / W
conduction
angle
degrees
Vo = 0.9400 V
Rs = 0.0100 Ohms
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
2
Rs = 0.01 Ohms
Vo = 0.94 V
0.1
factor = I
5
4
4
0.2
IF(AV) / A
IF(AV) / A
BYV34
MIN.
BYV34
2.8
F(RMS)
-
-
-
-
-
-
-
-
6
/ I
2.2
0.5
TYP.
I
0.87
1.10
F(AV)
0.2
4.0
2.5
10
50
50
F(AV)
10
Product specification
BYV34 series
1.9
=I
.
t
p
T
F(RMS)
Tmb(max) / C
8
Tmb(max) / C
MAX.
F
F
1.05
1.35
a = 1.57
0.6
5.0
50
60
60
= f(I
= f(I
D =
-
D = 1.0
x √ D.
Rev 1.400
t
T
F(AV)
F(AV)
p
t
10
UNIT
15
121.1
126
130.8
135.6
140.4
145.2
150
mA
) per
) per
102
114
126
138
150
µA
nC
ns
V
V
A
V