SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 8

• Manufacturer Part Number: SGB07N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 8A
• Manufacturer: Infineon Technologies

Specifications of SGB07N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB07N120XT

Power Semiconductors
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
30 s
25 s
20 s
15 s
10 s
20V
15V
10V
5 s
0 s
CE
5V
0V
Figure 17. Typical gate charge
(I
10V
C
= 1200V, start at T
0nC
= 8A)
V
GE
11V
,
Q
GATE
20nC
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
40nC
j
= 25 C)
13V
60nC
U
CE
14V
=960V
80nC
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V
100pF
150A
100A
50A
1nF
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
V
0V
V
= 0V, f = 1MHz)
CE
CE
V
,
GE
COLLECTOR
12V
,
1200V, T
GATE
10V
-
14V
EMITTER VOLTAGE
SGB07N120
-
C
EMITTER VOLTAGE
= 25 C, T
16V
20V
Rev. 2_2
j
18V
150 C)
30V
C
C
C
Apr 07
oss
rss
20V
iss