SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 6

• Manufacturer Part Number: SGB07N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 8A
• Manufacturer: Infineon Technologies

Specifications of SGB07N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB07N120XT

Power Semiconductors
100ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
10ns
10ns
CE
GE
-50°C
= 800V, V
= +15V/0V, I
0A
t
d(on)
t
d(on)
t
r
T
j
I
,
t
C
f
JUNCTION TEMPERATURE
,
5A
0°C
COLLECTOR CURRENT
GE
t
d(off)
C
= +15V/0V, R
j
CE
t
= 150 C,
f
= 8A, R
= 800V,
10A
t
50°C
d(off)
G
= 47 ,
15A
100°C
G
= 4 7 ,
20A
150°C
t
r
6
000ns
100ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
10ns
C
CE
6V
5V
4V
3V
2V
1V
0V
= 0.3mA)
-50°C
= 800V, V
0
t
T
d(on)
j
,
20
JUNCTION TEMPERATURE
0°C
R
GE
G
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
t
f
40
t
r
SGB07N120
50°C
t
d(off)
60
C
100°C
Rev. 2_2
= 8A,
80
150°C
max.
100
typ.
min.
Apr 07