GB20XF60K Vishay, GB20XF60K Datasheet - Page 7

• Manufacturer Part Number: GB20XF60K
• Description: IGBT Modules 30 Amp 600 Volt Non-Punch Through
• Manufacturer: Vishay

Specifications of GB20XF60K

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Package / Case: Econo 2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (max): 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94472
Revision: 01-Sep-08
0.01
0.01
0.1
0.1
10
10
1
1E-05
1
1E-05
0.01
0.02
0.5
0.3
0.1
0.05
0.5
0.05
0.02
0.01
0.3
0.1
SINGLE PULSE
(THERMAL RESPONSE)
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
For technical questions, contact: [e-mail]
1E-04
1E-04
IGBT Sixpack Module, 21 A
t1 , Rectangular Pulse Duration (sec)
t1 , Rectangular Pulse Duration (sec)
1E-03
1E-03
T
τ
J
J
τ
T
1
Ci= τi/Ri
τ
J
τ
J
τ
1
Ci= i/Ri
1
Ci= τi/Ri
τ
1
Ci= i/Ri
R
1
R
R
1
1
R
1
τ
1E-02
2
1E-02
τ
R
τ
2
2
2
R
τ
R
2
2
2
R
2
R
τ
3
3
R
τ
R
τ
3
3
3
3
R
τ
3
3
T
Vishay High Power Products
C
T
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
Ri (°C/W)
Ri (°C/W)
1E-01
0.263
0.284
0.583
1E-01
0.213
0.506
0.971
0.000265
0.005336
0.022245
0.000098
0.001245
0.039713
τ i (sec)
τ i (sec)
GB20XF60K
1E+00
1E+00
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