GB20XF60K Vishay, GB20XF60K Datasheet - Page 5

• Manufacturer Part Number: GB20XF60K
• Description: IGBT Modules 30 Amp 600 Volt Non-Punch Through
• Manufacturer: Vishay

Specifications of GB20XF60K

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Package / Case: Econo 2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (max): 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94472
Revision: 01-Sep-08
0.01
100
0.1
120
100
10
40
30
20
10
80
60
40
20
1
0
0
Fig. 11 - Maximum DC Collector Current vs.
1
0
0
Case Temperature (IGBT only)
Fig. 12 - Power Dissipation vs.
T
Fig. 13 - Forward SOA
10
40
C
40
= 25 °C; T
Case Temperature
Tc (°C)
Vce (V)
Tc (°C)
100
80
80
J
≤ 150 °C
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1000
120
120
100 µs
DC
10 ms
20 µs
1 ms
IGBT Sixpack Module, 21 A
10000
160
160
100
240
180
120
10
60
60
50
40
30
20
10
1
0
0
Fig. 16 - Typical Diode Forward Characteristics
1
2
0
Fig. 15 - Typical Transfer Characteristics
Vishay High Power Products
Fig. 14 - Reverse Bias SOA
T
0.5
V
J
5
CE
= 150 °C; V
Tj = 25°C
Tj = 125°C
10
= 50 V; t
Tj = 25°C
Tj = 125°C
Vge (V)
Vf (V)
t
Vce (V)
p
= 80 µs
1
8
p
GE
= 10 µs
GB20XF60K
100
= 15 V
1.5
11
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1000
14
2
5