GB20XF60K Vishay, GB20XF60K Datasheet - Page 4

• Manufacturer Part Number: GB20XF60K
• Description: IGBT Modules 30 Amp 600 Volt Non-Punch Through
• Manufacturer: Vishay

Specifications of GB20XF60K

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Package / Case: Econo 2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (max): 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GB20XF60K
Vishay High Power Products
www.vishay.com
4
0.01
1.1
0.9
0.7
0.5
0.3
0.1
0.1
0.8
0.6
0.4
0.2
0
1
10
20
0
T
T
T
Fig. 6 - Typical Switching Time vs. I
J
Fig. 7 - Typical Energy Loss vs. R
J
J
Fig. 5 - Typical Energy Loss vs. I
= 125 °C; L = 200 µH; V
= 125 °C; L = 200 µH; V
= 125 °C; L = 200 µH; V
15
10
I
R
25
R
CE
G
G
= 20 A; V
20
= 22 Ω; V
= 22 Ω; V
20
Rg ( Ω Ω )
Ic (A)
Ic (A)
25
30
GE
GE
GE
30
= 15 V
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= 15 V
= 15 V
30
E
CE
CE
CE
TOT
35
40
= 600 V,
E
= 600 V
= 600 V,
E
35
t
td
td
t
ON
F
R
E
IGBT Sixpack Module, 21 A
TOT
OFF
ON
E
E
OFF
ON
C
G
OFF
C
40
50
40
10000
1000
100
0.01
10
0.1
16
12
8
4
0
1
0
0
0
Fig. 8 - Typical Switching Time vs. R
T
Fig. 10 - Typical Gate Charge vs. V
Fig. 9 - Typical Capacitance vs. V
J
= 125 °C; L = 200 µH; V
Q
G
20
10
, Total Gate Charge (nC)
I
20
CE
V
GE
Td (ON)
= 20 A; V
40
= 0 V; f = 1 MHz
20
I
Vce (V)
CE
Rg (Ω Ω Ω Ω Ω )
= 20 A
40
300V
GE
60
30
Cies
Cres
Coes
Document Number: 94472
= 15 V
Tf
Tr
CE
Td (OFF)
60
Revision: 01-Sep-08
80
40
= 600 V
CE
GE
G
100
50
80