FF200R12KS4 Infineon Technologies, FF200R12KS4 Datasheet - Page 5

• Manufacturer Part Number: FF200R12KS4
• Description: IGBT Modules 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of FF200R12KS4

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 3.2 V
• Continuous Collector Current At 25 C: 275 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.4 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 200.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
#
#
"65 ( U CW3 "6ZZ ( U CW
"65 ( U CW3 "6ZZ ( U CW
,C. ( X0) ,3 4- (
,C. ( X0) ,3 4- (
#
#
4- ( U,-.W
4- ( U,-.W
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,C. ( X0) ,3 C6ZZ ( ? 8 N3 %&' ( 0 )*+
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#
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"65 ( U CW3 "6ZZ ( U CW
,C. ( X0) ,3 4- (
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4- ( U,-.W
4- ( U,-.W
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,C. ( X0) ,3 C6ZZ ( ? 8 N3 %&' ( 0 )*+
A
A
A
A
100
450
400
350
300
250
200
150
100
90
80
70
60
50
40
30
20
10
50
0
0
$
$
$
$
0
0
R !AG
R !AG
R !AG
R !AG
200
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93 ,-. ( 2
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10
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$
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600
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U
U
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15
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FF200R12KS4
W
W
W
W
W
W
W
W
20
1000 1200 1400
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U `#m9W
U `#m9W
U `#m9W
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%
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wBJa- ( U W
wBJa- ( U W
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1
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4f ( U,fW
4f ( U,fW
4f ( U,fW
0,001
A
A
A
A
0,01
400
350
300
250
200
150
100
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1
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!
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G
G
G
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wBJa- 4@`%
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1
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Mu v
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3
30
W
W
W
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20
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10