FF200R12KS4 Infineon Technologies, FF200R12KS4 Datasheet - Page 2

• Manufacturer Part Number: FF200R12KS4
• Description: IGBT Modules 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of FF200R12KS4

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 3.2 V
• Continuous Collector Current At 25 C: 275 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.4 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 200.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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