BSM100GD120DLC Infineon Technologies, BSM100GD120DLC Datasheet - Page 5

• Manufacturer Part Number: BSM100GD120DLC
• Description: IGBT Modules 1200V 100A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM100GD120DLC

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 650 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
6
0,5
BSM100GD120DLC
7
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1,0
8
V
V
GE
F
1,5
[V]
5(8)
[V]
9
I
C
2,0
V
CE
= f (V
= 20V
10
GE
)
2,5
11
I
F
= f (V
Seriendatenblatt_BSM100GD120DLC.xls
F
)
3,0
12