BSM100GD120DLC Infineon Technologies, BSM100GD120DLC Datasheet - Page 3

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BSM100GD120DLC

Manufacturer Part Number
BSM100GD120DLC
Description
IGBT Modules 1200V 100A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM100GD120DLC

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
160 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
650 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 3A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
Technische Information / Technical Information
Transistor / transistor, DC
Diode/Diode, DC
pro Modul / per module
BSM100GD120DLC
Paste
= 1 W/m * K /
screw M5
grease
3(8)
= 1 W/m * K
R
R
T
M1
T
T
thCK
G
thJC
op
stg
vj
min.
-40
-40
3
-
-
-
-
AL
0,009
typ.
225
300
-
-
-
-
-
2
O
Seriendatenblatt_BSM100GD120DLC.xls
3
max.
0,19
0,36
150
125
150
6
-
K/W
K/W
K/W
Nm
Nm
°C
°C
°C
g

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