BSM100GP60 Infineon Technologies, BSM100GP60 Datasheet - Page 5

• Manufacturer Part Number: BSM100GP60
• Description: IGBT Modules 600V 100A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM100GP60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 135 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
0
0
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
0,5
0,5
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
1
1
Tj = 25°C
Tj = 125°C
BSM100GP60
1,5
1,5
V
V
2
2
CE
CE
5(11)
[V]
[V]
2,5
2,5
3
3
I
C
V
I
T
C
GE
vj
= f (V
= f (V
= 125°C
= 15 V
CE
3,5
3,5
CE
)
)
4
4
4,5
4,5
5
5
DB-PIM-10.xls