BSM100GP60 Infineon Technologies, BSM100GP60 Datasheet - Page 2

• Manufacturer Part Number: BSM100GP60
• Description: IGBT Modules 600V 100A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM100GP60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 135 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
T
T
T
T
T
V
V
V
f = 1MHz, T
V
V
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
T
BSM100GP60
C
C
C
C
C
C
P
vj
vj
vj
vj
C
vj
GE
GE
CE
CE
GE
GE
CE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= I
= I
= I
= I
= I
= I
= 150°C,
= 150°C
= 150°C
= 150°C,
= 25°C
125°C,
= V
= 25 V, V
= 0V, V
10µs, V
= 15V, T
= 15V, T
= 0V,
= 0V,
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
Nenn
Nenn
Nenn
Nenn
Nenn
Nenn
GE
,
,
,
,
,
,
,
vj
GE
T
T
T
GE
= 25°C
vj
vj
GE
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
=20V, T
= 25°C, V
=125°C, V
= 25°C,
= 125°C,
= 25°C,
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 125°C, R
= 125°C, R
= 0 V
2(11)
15V,
vj
=25°C
dI/dt =
V
V
V
V
V
V
V
R
L
L
CC
CE
CE
CC
CC
CC
CC
CC
CC
I
I
G
I
G
G
G
G
G
G
G
G
G
G
V
C
C
S
S
C
I
=
F
=
R
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
= 100 A
= 1600 V
100 A
100 A
1,5 mA
600 V
600 V
300 V
15 Ohm
15 Ohm
300 V
15 Ohm
15 Ohm
300 V
15 Ohm
15 Ohm
300 V
15 Ohm
15 Ohm
300 V
15 Ohm
50 nH
300 V
15 Ohm
50 nH
15 Ohm
360 V
4000 A/µs
R
V
V
V
V
AA'+CC'
GE(TO)
C
I
I
t
t
CE sat
E
E
I
V
CES
GES
d,off
ISOL
d,on
r
I
(TO)
t
SC
t
R
ies
on
off
T
r
f
F
min.
min.
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
1,16
1,95
260
285
400
2,5
2,2
5,5
4,3
3,0
4,0
4,2
3,2
50
45
65
65
35
45
4
4
-
-
-
max.
max.
2,45
500
300
0,8
4,8
6,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DB-PIM-10.xls
mWs
mWs
m
m
mA
mA
kV
nF
µA
nA
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A