BSM50GD120DN2G Infineon Technologies, BSM50GD120DN2G Datasheet - Page 9
BSM50GD120DN2G
Manufacturer Part Number
BSM50GD120DN2G
Description
IGBT Modules 1200V 50A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GD120DN2G.pdf
(10 pages)
Specifications of BSM50GD120DN2G
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
78 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
EconoPACK 3A
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM50GD120DN2G
Manufacturer:
LAMBDA
Quantity:
530
Part Number:
BSM50GD120DN2G
Quantity:
143
BSM 50 GD 120 DN2G
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 300 g
9
Oct-01-2003