BSM50GD120DN2G Infineon Technologies, BSM50GD120DN2G Datasheet
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Manufacturer Part Number
BSM50GD120DN2G
Description
IGBT Modules 1200V 50A 3-PHASE
Manufacturer
Infineon Technologies
Specifications of BSM50GD120DN2G
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
78 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
EconoPACK 3A
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
BSM50GD120DN2G
Part Number:
BSM50GD120DN2G
BSM 50 GD 120 DN2G
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 50 GD 120 DN2G
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 78A
CE
I
C
1
Package
ECONOPACK 3
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67070-A2521-A67
+ 150
± 20
1200
1200
2500
156
100
400
0.35
F
78
50
16
11
0.7
Oct-01-2003
Unit
V
A
W
°C
K/W
Vac
mm
sec
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BSM50GD120DN2G Summary of contents
BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2G Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage R ...
BSM 50 GD 120 DN2G Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage °C ...
BSM 50 GD 120 DN2G Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...
BSM 50 GD 120 DN2G Power dissipation tot C parameter: T 150 °C j 450 W P 350 tot 300 250 200 150 100 Collector current ...
BSM 50 GD 120 DN2G Typ. output characteristics parameter µ ° 100 A 17V 15V 80 I 13V C 11V ...
BSM 50 GD 120 DN2G Typ. gate charge Gate parameter puls 600 120 ...
BSM 50 GD 120 DN2G Typ. switching time inductive load , T = 125° par 600 ± ...
BSM 50 GD 120 DN2G Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 100 =125° 0.0 0.5 1.0 ...
BSM 50 GD 120 DN2G Package Outlines Dimensions in mm Weight: 300 g Circuit Diagram 9 Oct-01-2003 ...
Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produkte s für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen ...
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