FF800R17KE3_B2 Infineon Technologies, FF800R17KE3_B2 Datasheet - Page 7

• Manufacturer Part Number: FF800R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 1.2KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KE3_B2

• Configuration: Dual Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FF800R17KE3_B2
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Vorläufige Daten
preliminary data