FZ1200R33KL2C Infineon Technologies, FZ1200R33KL2C Datasheet - Page 4

• Manufacturer Part Number: FZ1200R33KL2C
• Description: IGBT Modules N-CH 3.3KV 2.3KA
• Manufacturer: Infineon Technologies

Specifications of FZ1200R33KL2C

• Configuration: Triple
• Collector- Emitter Voltage Vceo Max: 3300 V
• Continuous Collector Current At 25 C: 2300 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV190
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 3.0 V
• Technology: IGBT2 Low Loss
• Housing: IHV 190 mm
• Lead Free Status / Rohs Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
9
9
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5- ) U,-.V
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2400
2000
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FZ1200R33KL2C
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U
U
U
U
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U
U
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10
V
V
V
V
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11
V
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12
V
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13
4
9
9
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2400
2000
1600
1200
8000
7000
6000
5000
4000
3000
2000
1000
%
%
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%
800
400
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R
R
R
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300 600 900 1200 1500 1800 2100 2400
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Vorläufige Daten
preliminary data
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U
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V
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