FZ1200R33KL2C Infineon Technologies, FZ1200R33KL2C Datasheet - Page 3
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FZ1200R33KL2C
Manufacturer Part Number
FZ1200R33KL2C
Description
IGBT Modules N-CH 3.3KV 2.3KA
Manufacturer
Infineon Technologies
Datasheet
1.FZ1200R33KL2C.pdf
(8 pages)
Specifications of FZ1200R33KL2C
Configuration
Triple
Collector- Emitter Voltage Vceo Max
3300 V
Continuous Collector Current At 25 C
2300 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHV190
Channel Type
N
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Ic (max)
1,200.0 A
Vce(sat) (typ)
3.0 V
Technology
IGBT2 Low Loss
Housing
IHV 190 mm
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FZ1200R33KL2C_B5
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FZ1200R33KL2C_B5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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