FZ1200R33KL2C Infineon Technologies, FZ1200R33KL2C Datasheet - Page 3

• Manufacturer Part Number: FZ1200R33KL2C
• Description: IGBT Modules N-CH 3.3KV 2.3KA
• Manufacturer: Infineon Technologies

Specifications of FZ1200R33KL2C

• Configuration: Triple
• Collector- Emitter Voltage Vceo Max: 3300 V
• Continuous Collector Current At 25 C: 2300 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV190
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 3.0 V
• Technology: IGBT2 Low Loss
• Housing: IHV 190 mm
• Lead Free Status / Rohs Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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