MWI450-12E9 IXYS, MWI450-12E9 Datasheet - Page 5

• Manufacturer Part Number: MWI450-12E9
• Description: Discrete Semiconductor Modules 450 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI450-12E9

• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 640
• Ic80, Tc = 80°c, Igbt, (a): 440
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 47
• Rthjc, Max, Igbt, (k/w): 0.057
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 450
• Package Style: E+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
300
250
200
150
100
60
50
40
30
20
10
50
35
30
25
20
15
10
0
0
5
0
0
Fig. 7 Typ. turn on energy and switching times
Fig. 9 Typ. turn on energy and switching times
Fig. 11 Typ. turn off energy and recovered charge
E
E
on
rec(off)
V
V
I
T
C
V
V
R
T
100 200 300 400 500 600 700 800 900
VJ
CE
GE
V
I
T
1000
VJ
CE
GE
G
E
F
= 450 A
R
VJ
= 600 V
= ±15 V
= 125°C
rec(off)
= 1.6 Ω
= 600 V
= ±15 V
= 125°C
= 125°C
5
= 600 V
= ±15 V
versus collector current
versus gate resistor
of free wheeling diode
E rec(off)
18 Ω
18Ω
10
2000
di/dt
12 Ω
R
12 Ω
I
C
G
15
[A/µs]
[A]
[Ω]
6.8 Ω
20
3000
t
Q rr
d(on)
25
E
t
r
on
3.3 Ω
3.3 Ω
t
t
d(on)
r
4000
30
240
180
120
60
0
600
500
400
300
200
100
0
70
65
60
55
50
45
40
0.08
0.06
0.04
0.02
0.00
120
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0
1
Fig. 8 Typ. turn off energy and switching times
Fig. 10 Typ. turn off energy and switching times
Fig. 12 Typ. transient thermal impedance
E
E
V
V
R
T
off
off
single pulse
V
V
I
T
VJ
C
CE
GE
G
CE
GE
VJ
= 450 A
= 600 V
= 1.6 Ω
= ±15 V
= 125°C
= 600 V
= ±15 V
= 125°C
5
200
versus collector current
versus gate resistor
10
10
400
I
C
R
100
t
15
MWI 450-12 E9
G
[A]
[ms]
[Ω]
600
20
1000
25
diode
t
800
MWI450-12E9
d(off)
IGBT
t
d(off)
t
t
10000
f
f
30
20100401a
600
500
400
300
200
100
0
2500
2000
1500
1000
500
0
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