MWI450-12E9 IXYS, MWI450-12E9 Datasheet - Page 4

• Manufacturer Part Number: MWI450-12E9
• Description: Discrete Semiconductor Modules 450 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI450-12E9

• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 640
• Ic80, Tc = 80°c, Igbt, (a): 440
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 47
• Rthjc, Max, Igbt, (k/w): 0.057
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 450
• Package Style: E+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
800
600
400
200
800
600
400
200
-10
-15
15
10
-5
0
5
0
0
0
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
V
I
C
CE
T
J
= 100 A
= 600 V
= 25°C
6
T
J
1
= 125°C
2
T
8
Q
J
V
= 25°C
G
CE
V
[µC]
GE
[V]
2
[V]
11 V
13 V
15 V
17 V
19 V
4
10
3
9 V
12
6
800
600
400
200
400
300
200
100
800
600
400
200
0
0
0
0.0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics
Fig. 6 Typ. turn off characteristics
I
T
V
I
RM
F
T
J
R
= 125°C
1000
J
= 300 A
= 600 V
0.5
= 125°C
of free wheeling diode
of free wheeling diode
18 Ω
18 Ω
T
1.0
J
= 125°C
2
12 Ω
12 Ω
2000
1.5
-di/dt
V
V
F
CE
T
J
[V]
= 25°C
MWI 450-12 E9
[V]
2.0
[A/µs]
6.8 Ω
6.8 Ω
4
3000
2.5
11 V
13 V
15 V
17 V
19 V
3.0
3.3 Ω
3.3 Ω
9 V
4000
t
3.5
rr
6
6000
5000
4000
3000
2000
1000
0
20100401a
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