MWI450-12E9 IXYS, MWI450-12E9 Datasheet - Page 3

• Manufacturer Part Number: MWI450-12E9
• Description: Discrete Semiconductor Modules 450 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI450-12E9

• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 640
• Ic80, Tc = 80°c, Igbt, (a): 440
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 47
• Rthjc, Max, Igbt, (k/w): 0.057
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 450
• Package Style: E+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
2.884·10
1.523·10
7.617·10
0.03
0.036
R
i
Diode
-5
-3
-3
= tolerance for all dimensions:
1·10
5·10
0.012
0.078
0.82
τ
i
-5
-5
2.344·10
5.97·10
5.97·10
0.023
0.028
R
i
-4
-3
IGBT
-5
1·10
5·10
0.015
0.075
0.69
τ
i
-5
-5
MWI 450-12 E9
20100401a
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