MJD112 ON Semiconductor, MJD112 Datasheet - Page 4

• Manufacturer Part Number: MJD112
• Description: Darlington Transistors 2A 100V Bipolar
• Manufacturer: ON Semiconductor

Specifications of MJD112

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 2 A
• Maximum Collector Cut-off Current: 20 uA
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 2 A
• Dc Collector/base Gain Hfe Min: 200, 500, 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

800
600
400
300
3.4
2.6
2.2
1.8
1.4
0.6
2.2
1.8
1.4
0.6
0.2
6 k
4 k
3 k
2 k
1 k
0.04
3
1
1
0.04
0.1
NPN MJD112
0.5 A
I
C
V
0.06
=
0.06
BE(sat)
0.2
T
V
J
= 25°C
CE(sat)
@ I
0.1
0.1
T
J
1 A
0.5
C
@ I
= 125°C
/I
I
I
- 55°C
C
B
C
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
C
= 250
/I
B
I
B
0.2
1
25°C
0.2
= 250
2 A
, BASE CURRENT (mA)
2
0.4
0.4
5
TYPICAL ELECTRICAL CHARACTERISTICS
4 A
0.6
0.6
10
Figure 8. Collector Saturation Region
V
BE
1
1
@ V
20
T
Figure 9. “On Voltages
J
Figure 7. DC Current Gain
CE
= 125°C
V
2
2
= 3 V
CE
http://onsemi.com
50
= 3 V
100
4
4
4
800
600
400
300
3.4
2.6
2.2
1.8
1.4
0.6
2.2
1.8
1.4
0.6
0.2
6 k
4 k
3 k
2 k
1 k
0.04
3
1
1
0.04
0.1
PNP MJD117
V
0.06
0.5 A
V
0.06
I
BE(sat)
C
0.2
CE(sat)
T
=
J
= 25°C
@ I
0.1
1 A
0.1
@ I
- 55°C
0.5
C
C
/I
T
I
I
/I
C
B
C
C
B
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
= 250
= 125°C
= 250
I
B
0.2
1
0.2
, BASE CURRENT (mA)
2 A
25°C
2
0.4
0.4
5
0.6
0.6
V
10
4 A
BE
1
@ V
1
20
CE
T
J
= 3 V
= 125°C
V
2
2
CE
50
= 3 V
100
4
4