BCV46 T/R NXP Semiconductors, BCV46 T/R Datasheet - Page 4

• Manufacturer Part Number: BCV46 T/R
• Description: Darlington Transistors TRANS DARLINGTON TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV46 T/R

• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCV46,215

NXP Semiconductors
CHARACTERISTICS
T
2004 Jan 13
handbook, full pagewidth
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
PNP Darlington transistors
V
100000
80000
60000
40000
20000
CE
= 25 °C unless otherwise specified.
h FE
= −2 V.
0
−1
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
BCV26
BCV46
BCV26
BCV46
BCV26
BCV46
BCV26
BCV46
PARAMETER
Fig.2 DC current gain; typical values.
−10
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= −1 mA; V
= −10 mA; V
= −100 mA; V
= −100 mA; I
= −100 mA; I
= −10 mA; V
= −30 mA; V
CB
CB
EB
4
= −30 V
= −60 V
= −10 V
CONDITIONS
CE
CE
CE
CE
B
B
CE
= −5 V; (see Fig.2)
= −0.1 mA
= −0.1 mA
= −5 V; (see Fig.2)
= −5 V
= −5 V; f = 100 MHz −
= −5 V; (see Fig.2)
−10
2
−
−
−
4 000
2 000
10 000 −
4 000
20 000 −
10 000 −
−
−
−
MIN.
I C (mA)
BCV26; BCV46
−
−
−
−
−
−
−
−
−
220
TYP. MAX. UNIT
Product data sheet
−100
−100
−100
−
−
−
−
−
−
−1
−1.5
−1.4
−
MGD836
−10
3
nA
nA
nA
V
V
V
MHz