2N6668 ON Semiconductor, 2N6668 Datasheet - Page 4

• Manufacturer Part Number: 2N6668
• Description: Darlington Transistors 10A 80V Bipolar
• Manufacturer: ON Semiconductor

Specifications of 2N6668

• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 100, 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20,000
10,000
0.05
0.03
0.02
10,000
0.5
0.3
0.2
0.1
7000
5000
3000
2000
1000
5000
2000
1000
20
10
700
500
300
200
5
3
2
1
500
200
100
50
20
10
1
0.1
1
Figure 6. Maximum Safe Operating Area
Figure 7. Typical Small-Signal Current Gain
T
T
J
J
= 150°C
2
= 25°C
2
V
0.2
CE
Figure 9. Typical DC Current Gain
T
3
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
T
3
= 150°C
J
0.3
I
5
= - 55°C
C
BONDING WIRE LIMIT
THERMAL LIMIT @ T
SECOND BREAKDOWN LIMIT
, COLLECTOR CURRENT (AMPS)
CURVES APPLY BELOW RATED V
T
V
I
7
C
C
CE
5
= 3 AMPS
0.5 0.7
10
= 25°C
= 4 VOLTS
f, FREQUENCY (kHz)
7
20
10
30
dc
1
50
5 ms
C
70
= 25°C
20
2N6667
2N6668
2
100
30
1 ms
3
200
V
CEO
CE
50
300
= 3 V
100 μs
5
2N6667, 2N6668
http://onsemi.com
70
500
7
100
1000
10
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150_C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
300
100
2.6
2.2
1.8
1.4
0.6
200
There are two limitations on the power handling ability of
The data of Figure 6 is based on T
70
50
30
1
0.3
0.1
Figure 10. Typical Collector Saturation Region
0.2
0.5
J(pk)
0.7
I
Figure 8. Typical Capacitance
C
may be calculated from the data in Figure 5.
0.5
= 2 A
V
1
R
, REVERSE VOLTAGE (VOLTS)
C
I
B
ib
1
, BASE CURRENT (mA)
2
2
4 A
3
5
5
J(pk)
10
7
T
C
= 150_C; T
J
ob
20
6 A
10
= 25°C
T
J
= 25°C
C
50
20
- V
J(pk)
C
30
100
CE
is